Typical Characteristic (Continued)
1.3
10000
1000
I
= 250µA
D
V
= 0V, f = 1MHz
GS
C
= C + C
GS GD
ISS
1.2
1.1
1.0
0.9
0.8
C
≅ C + C
GD
OSS
DS
100
10
C
= C
GD
RSS
-80
-40
0
40
80
120
160
200
0.1
1
10
100 200
o
T , JUNCTION TEMPERATURE ( C)
V
, DRAIN TO SOURCE VOLTAGE (V)
J
DS
Figure 11. Normalized Drain To Source
Breakdown Voltage vs Junction Temperature
Figure 12. Capacitance vs Drain to Source
Voltage
10
V
= 100V
DD
8
6
4
2
0
WAVEFORMS IN
DESCENDING ORDER:
I
I
= 22A
= 5A
D
D
0
10
20
30
40
50
60
70
Q , GATE CHARGE (nC)
g
Figure 13. Gate Charge Waveforms for Constant Gate Currents
Test Circuits and Waveforms
V
BV
DSS
DS
t
P
V
DS
L
I
AS
V
DD
VARY t TO OBTAIN
P
+
-
R
REQUIRED PEAK I
G
AS
V
DD
V
GS
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 14. Unclamped Energy Test Circuit
Figure 15. Unclamped Energy Waveforms
©2002 Fairchild Semiconductor Corporation
Rev. B
FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
