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IRF640N 参数 Datasheet PDF下载

IRF640N图片预览
型号: IRF640N
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道功率MOSFET 200V , 18A , 0.15ohm [N-Channel Power MOSFETs 200V, 18A, 0.15ohm]
分类和应用: 晶体晶体管局域网
文件页数/大小: 11 页 / 157 K
品牌: FAIRCHILD [ FAIRCHILD SEMICONDUCTOR ]
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PSPICE Electrical Model  
.SUBCKT IRF640N 2 1 3 ;  
rev 10 October 2000  
CA 12 8 3.6e-9  
CB 15 14 3.5e-9  
CIN 6 8 2e-9  
LDRAIN  
DBODY 7 5 DBODYMOD  
DBREAK 5 11 DBREAKMOD  
DPLCAP 10 5 DPLCAPMOD  
DPLCAP  
DRAIN  
2
5
10  
RLDRAIN  
RSLC1  
51  
DBREAK  
EBREAK 11 7 17 18 225  
EDS 14 8 5 8 1  
EGS 13 8 6 8 1  
ESG 6 10 6 8 1  
EVTHRES 6 21 19 8 1  
EVTEMP 20 6 18 22 1  
+
RSLC2  
5
51  
ESLC  
11  
-
+
50  
-
17  
DBODY  
RDRAIN  
6
8
EBREAK 18  
-
ESG  
EVTHRES  
+
16  
IT 8 17 1  
21  
+
-
19  
8
MWEAK  
LGATE  
EVTEMP  
LDRAIN 2 5 1e-9  
LGATE 1 9 5.78e-9  
LSOURCE 3 7 3.92e-9  
RGATE  
GATE  
1
+
6
-
18  
22  
MMED  
9
20  
MSTRO  
RLGATE  
LSOURCE  
CIN  
MMED 16 6 8 8 MMEDMOD  
MSTRO 16 6 8 8 MSTROMOD  
MWEAK 16 21 8 8 MWEAKMOD  
SOURCE  
3
8
7
RSOURCE  
RLSOURCE  
S1A  
S2A  
RBREAK 17 18 RBREAKMOD 1  
RDRAIN 50 16 RDRAINMOD 83.5e-3  
RGATE 9 20 7.6e-1  
RLDRAIN 2 5 10  
RLGATE 1 9 57.8  
RBREAK  
12  
15  
13  
14  
13  
17  
18  
8
RVTEMP  
19  
S1B  
S2B  
13  
CB  
CA  
IT  
14  
-
RLSOURCE 3 7 39.2  
+
+
VBAT  
RSLC1 5 51 RSLCMOD 1e-6  
RSLC2 5 50 1e3  
RSOURCE 8 7 RSOURCEMOD 10e-3  
RVTHRES 22 8 RVTHRESMOD 1  
RVTEMP 18 19 RVTEMPMOD 1  
6
8
5
8
EGS  
EDS  
+
-
-
8
22  
RVTHRES  
S1A 6 12 13 8 S1AMOD  
S1B 13 12 13 8 S1BMOD  
S2A 6 15 14 13 S2AMOD  
S2B 13 15 14 13 S2BMOD  
VBAT 22 19 DC 1  
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*38),2.5))}  
.MODEL DBODYMOD D (IS = 1.2e-12 RS = 5.5e-3  
XTI = 5.5 TRS1 = 1e-5 TRS2 = 8e-6 + CJO = 12.5e-10 TT = 1e-7 M = 0.42)  
.MODEL DBREAKMOD D (RS = 2.5 TRS1 = 1e-3 TRS2 = -8.9e-6)  
.MODEL DPLCAPMOD D (CJO = 2.5e-9 IS = 1e-30 N = 10 M = 0.9)  
.MODEL MMEDMOD NMOS (VTO = 3.14 KP = 5 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 7.6e-1)  
.MODEL MSTROMOD NMOS (VTO = 3.68 KP = 100 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)  
.MODEL MWEAKMOD NMOS (VTO = 2.76 KP = 0.05 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 7.6 RS = 0.1)  
.MODEL RBREAKMOD RES (TC1 =1.52e-3 TC2 = -2e-7)  
.MODEL RDRAINMOD RES (TC1 = 9.8e-3 TC2 = 2.6e-5)  
.MODEL RSLCMOD RES (TC1 = 3e-3 TC2 = 1e-6)  
.MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 1e-6)  
.MODEL RVTHRESMOD RES (TC1 = -2.3e-3 TC2 = -1.3e-5)  
.MODEL RVTEMPMOD RES (TC1 = -2.8e-3 TC2 = 1.7e-6)  
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -8.5 VOFF= -1)  
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1 VOFF= -8.5)  
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.1 VOFF= 0.2)  
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.2 VOFF= -0.1)  
.ENDS  
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global  
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank  
Wheatley.  
©2002 Fairchild Semiconductor Corporation  
Rev. B