Freescale Semiconductor
Technical Data
Document Number: MWE6IC9100N
Rev. 2, 6/2007
RF LDMOS Wideband Integrated
Power Amplifiers
The MWE6IC9100N wideband integrated circuit is designed with on - chip
matching that makes it usable from 869 to 960 MHz. This multi - stage
structure is rated for 26 to 32 Volt operation and covers all typical cellular base
station modulations.
Final Application
•
Typical GSM Performance: V
DD
= 26 Volts, I
DQ1
= 120 mA, I
DQ2
= 950 mA,
P
out
= 100 Watts CW, Full Frequency Band (869 - 960 MHz)
Power Gain — 33.5 dB
Power Added Efficiency — 54%
GSM EDGE Application
•
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ1
= 230 mA, I
DQ2
=
870 mA, P
out
= 50 Watts Avg., Full Frequency Band (869 - 960 MHz)
Power Gain — 35.5 dB
Power Added Efficiency — 39%
Spectral Regrowth @ 400 kHz Offset = - 63 dBc
Spectral Regrowth @ 600 kHz Offset = - 81 dBc
EVM — 2% rms
•
Capable of Handling 10:1 VSWR, @ 32 Vdc, 960 MHz, 3 dB Overdrive,
Designed for Enhanced Ruggedness
•
Stable into a 5:1 VSWR. All Spurs Below - 60 dBc @ 0 to 50.8 dBm CW (or
1 mW to 120 W CW) P
out
.
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
and Common Source Scattering Parameters
•
On - Chip Matching (50 Ohm Input, DC Blocked)
•
Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
(1)
•
Integrated ESD Protection
•
200°C Capable Plastic Package
•
RoHS Compliant
•
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MWE6IC9100NR1
MWE6IC9100GNR1
MWE6IC9100NBR1
960 MHz, 100 W, 26 V
GSM/GSM EDGE
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1618 - 01
TO - 270 WB - 14
PLASTIC
MWE6IC9100NR1
CASE 1621 - 01
TO - 270 WB - 14 GULL
PLASTIC
MWE6IC9100GNR1
CASE 1617 - 01
TO - 272 WB - 14
PLASTIC
MWE6IC9100NBR1
V
DS1
RF
in
RF
out
/V
DS2
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
(1)
NC
V
DS1
NC
NC
NC
RF
in
RF
in
NC
V
GS1
V
GS2
V
DS1
NC
1
2
3
4
5
6
7
8
9
10
11
12
14
RF
out
/V
DS2
13
RF
out
/V
DS2
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977,
Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
and to AN1987,
Quiescent Current Control
for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977 or AN1987.
©
Freescale Semiconductor, Inc., 2007. All rights reserved.
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
1
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
