Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
J
Value
- 0.5, +66
- 0.5, +6
- 65 to +200
200
Unit
Vdc
Vdc
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
GSM Application
(P
out
= 100 W CW)
GSM EDGE Application
(P
out
= 50 W Avg.)
Stage 1, 26 Vdc, I
DQ1
= 120 mA
Stage 2, 26 Vdc, I
DQ2
= 950 mA
Stage 1, 28 Vdc, I
DQ1
= 230 mA
Stage 2, 28 Vdc, I
DQ2
= 870 mA
Symbol
R
θJC
1.82
0.38
1.77
0.44
Value
(1,2)
Unit
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
2 (Minimum)
B (Minimum)
III (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
3
Package Peak Temperature
260
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Stage 1 — Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 66 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate - Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
Stage 1 — On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 35
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 120 mAdc)
Fixture Gate Quiescent Voltage
(V
DD
= 26 Vdc, I
D
= 120 mAdc, Measured in Functional Test)
V
GS(th)
V
GS(Q)
V
GG(Q)
1.5
—
6
2
2.7
9.4
3.5
—
12
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
10
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
1. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
(continued)
MWE6IC9100NR1 MWE6IC9100GNR1 MWE6IC9100NBR1
2
RF Device Data
Freescale Semiconductor
FREESCALE [ FREESCALE SEMICONDUCTOR, INC ]
