< IGBT MODULES >
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
BRAKE PART
COLLECTOR-EMITTER SATURATION
CLAMP DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
VOLTAGE CHARACTERISTICS
(TYPICAL)
VGE=15 V
G-E short-circuited
(Chip)
(Chip)
3.5
3
1000
Tj=150 °C
Tj=125 °C
2.5
2
Tj=125 °C
100
1.5
1
Tj=25 °C
Tj=150 °C
0.5
0
Tj=25 °C
10
0
20
40
60
80
100
0.5
1
1.5
2
2.5
3
3.5
4
COLLECTOR CURRENT IC (A)
FORWARD CURRENT IF (A)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
VCC=600 V, VGE=±15 V, RG=13 Ω, INDUCTIVE LOAD
VCC=600 V, IC=50 A, VGE=±15 V, INDUCTIVE LOAD
---------------: Tj=150 °C, - - - - -: Tj=125 °C
---------------: Tj=150 °C, - - - - -: Tj=125 °C
1000
100
10
1000
td(off)
tf
td(off)
tf
td(on)
td(on)
100
tr
tr
1
10
1
10
100
10
100
1000
COLLECTOR CURRENT IC (A)
EXTERNAL GATE RESISTANCE RG (Ω)
Publication Date : December 2013
10
MITSUBISHI [ Mitsubishi Group ]
