< IGBT MODULES >
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
21
21
21
V
GE
=15V
20
V
GE
=15V
I
C
16
V
GE
=15V
I
C
12
I
C
V
Short-
circuited
19
1
V
Short-
circuited
15
2
V
Short-
circuited
11
3
18
22
14
22
10
22
17
13
9
21
21
21
21
Short-
circuited
20
Short-
circuited
16
Short-
circuited
12
19
1
V
15
2
V
11
3
V
4
V
V
GE
=15V
18
22
V
GE
=15V
I
C
14
22
V
GE
=15V
I
C
10
22
V
GE
=15V
I
C
6
22
I
C
17
13
9
5
Gate-emitter GVP-EVP GVN-EVN,
short-circuited GWP-EWP, GWN-EWN,
GB-EB
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GWP-EWP, GWN-EWN,
GB-EB
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GVP-EVP, GVN-EVN,
GB-EB
UP / UN IGBT
VP / VN IGBT
WP / WN IGBT
Brake IGBT
V
CE s a t
characteristics test circuit
21
21
21
Short-
circuited
20
I
E
Short-
circuited
16
I
E
Short-
circuited
12
I
E
V
Short-
circuited
19
1
V
Short-
circuited
15
2
V
Short-
circuited
11
3
18
22
14
22
10
22
17
13
9
21
21
21
21
Short-
circuited
20
Short-
circuited
16
Short-
circuited
12
I
E
19
1
V
Short-
circuited
15
2
V
Short-
circuited
11
3
V
4
V
Short-
circuited
18
22
I
E
I
E
14
22
I
E
10
22
6
22
17
13
9
5
Gate-emitter GVP-EVP GVN-EVN,
short-circuited GWP-EWP, GWN-EWN,
GB-EB
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GWP-EWP, GWN-EWN,
GB-EB
Gate-emitter GUP-EUP, GUN-EUN,
short-circuited GVP-EVP, GVN-EVN,
GB-EB
UP / UN DIODE
VP / VN DIODE
WP / WN DIODE
Brake DIODE
V
EC
/ V
F
characteristics test circuit
Publication Date : December 2013
6
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
