< IGBT MODULES >
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
CAPACITANCE CHARACTERISTICS
(TYPICAL)
G-E short-circuited, T
j
=25 °C
100
1000
FREE WHEELING DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
V
CC
=600 V, V
GE
=±15 V, R
G
=6.2 Ω, INDUCTIVE LOAD
---------------: T
j
=150 °C, - - - - -: T
j
=125 °C
C
ies
10
(nF)
(A)
I
rr
100
CAPACITANCE
1
C
oes
(ns), I
r r
0.1
C
res
0.01
0.1
1
10
100
t
rr
t
rr
10
10
100
1000
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
EMITTER CURRENT
I
E
(A)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
V
CC
=600 V, I
C
=100 A, T
j
=25 °C
Z
th(j-c)
20
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
(MAXIMUM)
Single pulse, T
C
=25 °C
R
t h ( j - c ) Q
=0.24 K/W, R
t h ( j - c ) D
=0.37 K/W
1
15
NORMALIZED TRANSIENT THERMAL RESISTANCE
V
GE
(V)
0.1
GATE-EMITTER VOLTAGE
10
0.01
5
0
0
50
100
150
200
250
300
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
GATE CHARGE
Q
G
(nC)
TIME
(S)
Publication Date : December 2013
9
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
