< IGBT MODULES >
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
INVERTER PART
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
OUTPUT CHARACTERISTICS
(TYPICAL)
(TYPICAL)
Tj=25 °C
VGE=15 V
(Chip)
(Chip)
200
150
100
50
3.5
3
VGE=20 V
15 V
12 V
11 V
Tj=150 °C
Tj=125 °C
2.5
2
1.5
1
Tj=25 °C
10 V
9 V
0.5
0
0
0
2
4
6
8
10
0
50
100
150
200
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE
CHARACTERISTICS
FREE WHEELING DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
(TYPICAL)
Tj=25 °C
G-E short-circuited
(Chip)
(Chip)
10
1000
100
10
IC=200 A
IC=100 A
8
6
4
2
0
Tj=125 °C
IC=40 A
Tj=150 °C
Tj=25 °C
6
8
10
12
14
16
18
20
0.5
1
1.5
2
2.5
3
3.5
4
GATE-EMITTER VOLTAGE VGE (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
Publication Date : December 2013
7
MITSUBISHI [ Mitsubishi Group ]
