< IGBT MODULES >
CM100RX-24S1
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
VCES
VGES
IC
Item
Collector-emitter voltage
Gate-emitter voltage
Conditions
Rating
1200
± 20
100
Unit
V
G-E short-circuited
C-E short-circuited
V
(Note2, 4)
DC, TC=107 °C
Collector current
Total power dissipation
Emitter current
A
W
A
(Note3)
ICRM
Ptot
IE
Pulse, Repetitive
200
(Note2, 4)
TC=25 °C
625
(Note1)
(Note1)
(Note2)
DC
100
(Note3)
IERM
Pulse, Repetitive
200
BRAKE PART IGBT/DIODE
Symbol
Item
Conditions
Rating
1200
± 20
50
Unit
V
VCES
VGES
IC
Collector-emitter voltage
Gate-emitter voltage
G-E short-circuited
C-E short-circuited
V
(Note2, 4)
DC, TC=113 °C
Collector current
A
(Note3)
ICRM
Ptot
VRRM
IF
Pulse, Repetitive
100
340
1200
50
(Note2, 4)
Total power dissipation
TC=25 °C
W
V
Repetitive peak reverse voltage
G-E short-circuited
(Note2)
DC
Forward current
A
(Note3)
IFRM
Pulse, Repetitive
100
MODULE
Symbol
Vi s o l
Item
Conditions
Rating
4000
Unit
V
Isolation voltage
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Tj m a x
Maximum junction temperature
Maximum case temperature
Operating junction temperature
Storage temperature
Instantaneous event (overload)
(Note4)
175
°C
°C
TC m a x
Tj o p
125
Continuous operation (under switching)
-
-40 ~ +150
-40 ~ +125
Ts t g
ELECTRICAL CHARACTERISTICS (Tj=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Limits
Symbol
Item
Conditions
Unit
Min.
Typ.
Max.
1.0
0.5
6.6
2.25
-
ICES
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
VCE=VCES, G-E short-circuited
VGE=VGES, C-E short-circuited
IC=10 mA, VCE=10 V
-
-
-
mA
μA
V
IGES
-
VGE(th)
5.4
-
6.0
IC=100 A, VGE=15 V,
Tj =25 °C
Tj =125 °C
Tj =150 °C
Tj =25 °C
1.80
VCEsat
(Terminal)
Refer to the figure of test circuit
-
2.00
V
V
(Note5)
-
2.05
-
Collector-emitter saturation voltage
IC=100 A,
-
1.70
2.15
-
VCEsat
(Chip)
VGE=15 V,
(Note5)
Tj =125 °C
Tj =150 °C
-
1.90
-
1.95
-
Ci e s
Co e s
Cr e s
QG
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
-
-
10
VCE=10 V, G-E short-circuited
-
-
2.0
0.17
-
nF
nC
-
-
VCC=600 V, IC=100 A, VGE=15 V
VCC=600 V, IC=100 A, VGE=±15 V,
-
210
td ( o n )
tr
td ( o f f )
tf
Turn-on delay time
Rise time
-
-
-
-
-
300
200
600
300
-
ns
Turn-off delay time
Fall time
-
RG=6.2 Ω, Inductive load
-
Publication Date : December 2013
2
MITSUBISHI [ Mitsubishi Group ]
