MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
possible by an advanced RTC
(Real Time Control) current clamp-
ing circuit that eliminates the need
for the over current protection func-
tion. In V-Series IPMs a unified
short circuit protection with a delay
to avoid unwanted operation re-
places the over current and short
circuit modes of the third genera-
tion devices.
6.1 Structure of Intelligent
Power Modules
Mitsubishi Intelligent Power Mod-
ules utilize many of the same field
proven module packaging tech-
nologies used in Mitsubishi IGBT
modules. Cost effective implemen-
tation of the built in gate drive and
protection circuits over a wide
range of current ratings was
achieved using two different pack-
aging techniques. Low power de-
vices use a multilayer epoxy isola-
tion system while medium and high
power devices use ceramic isola-
tion. These packaging technologies
are described in more detail in Sec-
tions 6.1.1 and 6.1.2. IPM are
available in four power circuit con-
figurations, single (H), dual (D), six
pack (C), and seven pack (R).
Table 6.1 indicates the power cir-
cuit of each IPM and Figure 6.1
shows the power circuit configura-
tions.
chips and gate control circuit com-
ponents are soldered directly to the
substrate eliminating the need for a
separate printed circuit board and
ceramic isolation materials. Mod-
ules constructed using this tech-
nique are easily identified by their
Figure 6.1
TYPE C
P
Power Circuit
Configuration
extremely low profile packages.
This package design is ideally
suited for consumer and industrial
applications where low cost and
compact size are important.
Figure 6.2 shows a cross section
of this type of IPM package. Figure
6.3 is a PM20CSJ060 20A, 600V
IPM.
Figure 6.2
Multi-Layer Epoxy
Construction
3
4
5
2
1
U
V
W
6
7
8
9
10
11
N
TYPE R
P
B
U
V
W
1. Case
2. Epoxy Resin
3. Input Signal Terminal
4. SMT Resistor
5. Gate Control IC
6. SMT Capacitor
7. IGBT Chip
8. Free-wheel Diode Chip
9. Bond Wire
10. Copper Block
11. Baseplate with Epoxy
Based Isolation
Figure 6.3
N
TYPE D
C1
TYPE H
C
PM20CSJ060
6.1.1 Multilayer Epoxy Construc-
tion
Low power IPM (10-50A, 600V and
10-15A, 1200V) use a multilayer
epoxy based isolation system. In
this system, alternate layers of cop-
per and epoxy are used to create a
shielded printed circuit directly on
the aluminum base plate. Power
E2
C2E1
E
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
