MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
6.1.3 V-Series IPM Construction
V-Series IPMs are similar to the ce-
ramic isolated types described
in Section 6.1.2 except that an in-
sert molded case similar to the
U-Series IGBT is used. Like the
U-Series IGBT described in Sec-
tion 4.1.5, the V-Series IPM
has lower internal inductance and
improved power cycle durability.
Figure 6.6 is a cross section draw-
ing showing the construction of the
V-Series IPM. The insert molded
case makes the V-Series IPM is
easier to manufacture and lower in
cost. Figure 6.7 shows a
PM150CVA120 which is a 150A
1200V V-Series IPM.
6.1.4 Advantages of Intelligent
Power Module
IPM (Intelligent Power Module)
products were designed and devel-
oped to provide advantages to
Customers by reducing design, de-
velopment, and manufacturing
costs as well as providing improve-
ment in system performance and
reliability over conventional IGBTs.
Design and development effort is
simplified and successful drive co-
ordination is assured by the inte-
gration of the drive and protection
circuitry directly into the IPM. Re-
duced time to market is only one of
the additional benefits of using an
IPM. Others include increased sys-
tem reliability through automated
IPM assembly and test and reduc-
tion in the number of components
that must be purchased, stored,
and assembled. Often the system
size can be reduced through
smaller heatsink requirements as a
result of lower on-state and switch-
ing losses. All IPMs use the same
standardized gate control interface
with logic level control circuits al-
lowing extension of the product line
without additional drive circuit de-
sign. Finally, the ability of the IPM
to self protect in fault situations re-
duce the chance of device destruc-
tion during development testing as
well as in field stress situations.
6.2 IPM Ratings and Characteris-
tics
IPM datasheets are divided into
three sections:
•
•
•
Maximum Ratings
Characteristics (electrical,
thermal, mechanical)
Recommended Operating
Conditions
The limits given as maximum rating
must not be exceeded under any
circumstances, otherwise destruc-
tion of the IPM may result.
Key parameters needed for system
design are indicated as electrical,
thermal, and mechanical character-
istics.
The given recommended operating
conditions and application circuits
should be considered as a prefer-
able design guideline fitting most
applications.
Figure 6.6
V-Series IPM Construction
SILICONE GEL
Figure 6.7
PM150CVA120
POWER TERMINALS
SIGNAL TERMINALS
COVER
INSERT MOLD CASE
PRINTED CIRCUIT
BOARD
BASE PLATE
SILICON CHIPS
ALUMINUM
BOND WIRES
DBC AIN CERAMIC
SUBSTRATE
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
