MITSUBISHI SEMICONDUCTORS POWER MODULES MOS
USING INTELLIGENT POWER MODULES
6.1.2 Ceramic Isolation Con-
struction
Higher power IPMs are constructed
using ceramic isolation material. A
direct bond copper process in
which copper patterns are bonded
directly to the ceramic substrate
without the use of solder is used in
these modules. This substrate pro-
vides the improved thermal charac-
teristics and greater current carry-
ing capabilities that are needed in
these higher power devices. Gate
drive and control circuits are con-
tained on a separate PCB mounted
directly above the power devices.
The PCB is a multilayer construc-
tion with special shield layers for
EMI noise immunity. Figure 6.4
shows the structure of a ceramic
isolated Intelligent Power Module.
Figure 6.5 is a PM75RSA060 75 A,
600V IPM.
Figure 6.4 Ceramic Isolation Construction
INPUT SIGNAL
TERMINAL
MAIN
TERMINAL
EPOXY
RESIN
GUIDE
PIN
CASE
BASE
PLATE
SILICON GEL
SILICON CHIP
DBC PLATE
CONTROL BOARD
PCB
RESISTOR
ELECTRODE
ALUMINUM WIRE
INTERCONNECT
TERMINAL
SHIELD
LAYER
SHIELD
LAYER
SIGNAL
TRACE
Figure 6.5 PM75RSA060
Sep.1998
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
