MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
Input / Output Impedance VS. Frequency Characteristics
Zout* ( f=450, 490, 520, 527MHz)
Zo=10ohm
@Pin=0.4W, Vdd=7.2V,
Idq=250mA(Vgg adj.)
f
Zout*
(ohm)
(MHz)
450 2.80+j1.07
490 2.25+j0.75
520 1.51+j1.04
527 1.36+j1.20
f=527MHz
f=520MHz
f=450MHz
f=485MHz
Zout*: Complex conjugate of
output impedance
@Pin=0.4W, Vdd=7.2V,
Idq=250mA(Vgg adj.)
Zin* ( f=450, 490, 520, 527MHz)
Zo=10ohm
f
Zin*
(MHz)
(ohm)
450 2.62+j2.02
490 2.90+j3.07
520 3.29+j3.70
527 3.40+j3.81
f=520MHz
f=490MHz
f=450MHz
f=527MHz
Zin*: Complex conjugate of
input impedance
RD07MUS2B
9 Sep 2009
MITSUBISHI ELECTRIC
9/14
MITSUBISHI [ Mitsubishi Group ]
