MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
10
Vgg-Po CHARACTERISTICS @f=175MHz
Ta=+25°C
f=175MHz
Pin=0.3W
Icq=250mA
Zg=ZI=50 ohm
5
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
TYPICAL CHARACTERISTICS
(These are only typical curves and devices are not necessarily guaranteed at these curves.)
25
Vdd-Po CHARACTERISTICS @f=175MHz
Ta=+25°C
f=175MHz
Pin=0.3W
Icq=250mA
Zg=ZI=50 ohm
5
20
4
8
Po
4
15
Po(W)
Idd(A)
10
Idd
2
Po(W)
4
Idd
2
5
1
2
1
0
3
4
5
6
7
Vdd(V)
8
9
10
0
0
0
0.4
0.8
1.2
Vgg(V)
1.6
2
0
25
Vdd-Po CHARACTERISTICS @f=527MHz
Ta=+25°C
f=527MHz
Pin=0.4W
Idq=250mA
Zg=ZI=50 ohm
Po
5
10
Vgg-Po CHARACTERISTICS @f=527MHz
Ta=+25°C
f=527MHz
Pin=0.4W
Icq=250mA
Zg=ZI=50 ohm
5
20
4
8
Po
4
Po(W)
Idd(A)
15
3
6
Po(W)
3
Idd(A)
10
Idd
5
2
4
Idd
2
2
1
1
0
3
4
5
6
7
Vdd(V)
8
9
10
0
0
0
0.4
0.8
1.2
Vgg(V)
1.6
2
0
25
Vdd-Po CHARACTERISTICS @f=870MHz
Ta=+25°C
f=870MHz
Pin=0.5W
Icq=250mA
Zg=ZI=50 ohm
5
20
4
Po(W)
10
Idd
2
5
Po
1
0
3
4
5
6
7
Vdd(V)
8
9
10
0
RD07MUS2B
Idd(A)
15
3
MITSUBISHI ELECTRIC
5/14
9 Sep 2009
Idd(A)
Po
3
6
3
MITSUBISHI [ MITSUBISHI ELECTRIC SEMICONDUCTOR ]
