MITSUBISHI RF POWER MOS FET
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
RD07MUS2B
@Pin=0.3W, Vdd=7.2V,
Idq=250mA(Vgg adj.)
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W
Input / Output Impedance VS. Frequency Characteristics
f=175MHz
f=155MHz
f=135MHz
f
Zout*
(MHz)
(ohm)
135 3.50-j5.54
155 2.57-j2.57
175 2.06+j0.62
Zo=10ohm
Zout* ( f=135, 155, 175MHz)
Zout*: Complex conjugate of
output impedance
Zin* ( f=135, 155, 175MHz)
Zo=10ohm
@Pin=0.3W, Vdd=7.2V,
Idq=250mA(Vgg adj.)
f=175MHz
f=155MHz
f
Zin*
(MHz)
(ohm)
135 5.58+j2.43
155 5.25+j5.60
175 5.01+j8.65
f=135MHz
Zin*: Complex conjugate of
input impedance
RD07MUS2B
MITSUBISHI ELECTRIC
8/14
9 Sep 2009