NTB25P06
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(V
GS
= 0 V, I
D
= −250
mA)
(Positive Temperature Coefficient)
Zero Gate Voltage Drain Current
(V
GS
= 0 V, V
DS
= −60 V, T
J
= 25°C)
(V
GS
= 0 V, V
DS
= −60 V, , T
J
= 150°C)
Gate−Body Leakage Current (V
GS
=
±
15 V, V
DS
= 0 V)
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
(V
DS
= V
GS,
I
D
= −250
mA)
(Negative Threshold Temperature Coefficient)
Static Drain−Source On−State Resistance
(V
GS
= −10 V, I
D
= −12.5 A)
(V
GS
= −10 V, I
D
= −25 A)
Forward Transconductance
(V
DS
= −10 V, I
D
= −12.5 A)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
(Notes 3 & 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DS
= −48 V, I
D
= −25 A,
V
GS
= −10 V)
BODY−DRAIN DIODE RATINGS
(Note 3)
Diode Forward On−Voltage
Reverse Recovery Time
(I
S
= −25 A, V
GS
= 0 V,
dI
S
/dt = 100 A/ms)
Reverse Recovery Stored Charge
(I
S
= −25 A, V
GS
= 0 V)
(I
S
= −25 A, V
GS
= 0 V, T
J
= 150°C)
V
SD
t
rr
t
a
t
b
Q
RR
3. Indicates Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperatures.
−
−
−
−
−
−
−1.8
−1.4
70
50
20
0.2
−2.5
−
−
−
−
−
mC
V
ns
(V
DD
= −30 V, I
D
= −25 A,
V
GS
= −10 V R
G
= 9.1
W)
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
1
Q
2
−
−
−
−
−
−
−
14
72
43
190
33
6.5
15
24
118
68
320
50
−
−
ns
ns
ns
ns
nC
(V
DS
= −25 V, V
GS
= 0 V,
F = 1.0 MHz)
C
iss
C
oss
C
rss
−
−
−
1200
345
90
1680
480
180
pF
V
GS(th)
−2.0
−
R
DS(on)
−
−
gFS
−
13
−
0.065
0.070
0.075
0.082
Mhos
−2.8
6.2
−4.0
−
V
mV/°C
W
V
(BR)DSS
−60
−
I
DSS
−
−
I
GSS
−
−
−
−
−10
−100
±100
nA
−
64
−
−
V
mV/°C
mA
Symbol
Min
Typ
Max
Unit
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