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NTB25P06 参数 Datasheet PDF下载

NTB25P06图片预览
型号: NTB25P06
PDF下载: 下载PDF文件 查看货源
内容描述: 功率MOSFET -60 V, -27.5 A, P沟道D2PAK [Power MOSFET −60 V, −27.5 A, P−Channel D2PAK]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲
文件页数/大小: 6 页 / 60 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NTB25P06
50
−I
D
, DRAIN CURRENT (AMPS)
45
40
35
30
25
20
15
10
5
0
0
2
4
6
8
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
−5.5 V
−5 V
−4.5 V
−4.2 V
−6 V
V
GS
= −10 V
−9 V
−8 V
T
J
= 25°C
−7 V
−I
D
, DRAIN CURRENT (AMPS)
50
V
DS
10 V
T
J
= 25°C
40
30
T
J
= −55°C
T
J
= 125°C
20
10
0
2
4
6
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
8
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.2
V
GS
= −10 V
0.15
T
J
= 125°C
0.1
T
J
= 25°C
0.05
T
J
= −55°C
0.095
T
J
= 25°C
0.085
V
GS
= −10 V
0.075
V
GS
= −15 V
0
0
10
20
30
40
50
0.065
10
20
30
40
50
−I
D
, DRAIN CURRENT (AMPS)
−I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.75
I
D
= −25 A
V
GS
= −10 V
1.5
10000
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
−I
DSS
, LEAKAGE (nA)
1000
T
J
= 150°C
1.25
1
100
T
J
= 125°C
0.75
10
−25
0
25
50
75
100
125
150
0
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.5
−50
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3