NTB25P06
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
3000
2500
C, CAPACITANCE (pF)
2000
1500
1000
500
V
DS
= 0 V
C
iss
V
GS
= 0 V
T
J
= 25°C
10
V
DS
8
Q
1
6
Q
2
Q
T
V
GS
C
rss
C
iss
4
C
oss
C
rss
2
I
D
= −25 A
T
J
= 25°C
0
4
10
15
20
25
30
35
0
10
5 −V
GS
0 −V
DS
5
0
Q
g
, TOTAL GATE CHARGE (nC)
10
15
20
25
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
1000
−I
S
, SOURCE CURRENT (AMPS)
25
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
20
t
r
t, TIME (ns)
100
t
f
t
d(off)
10
t
d(on)
V
DD
= −30 V
I
D
= −25 A
V
GS
= −10 V
1
1
10
R
G
, GATE RESISTANCE (W)
100
15
10
5
0
0
0.25
0.5
0.75
1
1.25
1.5
1.75
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
−I
D
, DRAIN CURRENT (AMPS)
V
GS
= −20 V
SINGLE PULSE
T
C
= 25°C
100
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
600
Figure 10. Diode Forward Voltage vs. Current
I
D
= −25 A
500
400
300
200
100
0
25
10
dc
10 ms
1 ms
1
R
DS(on)
Limit
Thermal Limit
Package Limit
1
100
ms
0.1
0.1
10
100
50
75
100
125
150
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
J
, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
4
ONSEMI [ ON SEMICONDUCTOR ]
