欢迎访问ic37.com |
会员登录 免费注册
发布采购

RQK0608BQDQSTL-E 参数 Datasheet PDF下载

RQK0608BQDQSTL-E图片预览
型号: RQK0608BQDQSTL-E
PDF下载: 下载PDF文件 查看货源
内容描述: 硅N沟道MOS FET电源开关 [Silicon N Channel MOS FET Power Switching]
分类和应用: 晶体开关晶体管功率场效应晶体管脉冲电源开关ISM频段
文件页数/大小: 8 页 / 115 K
品牌: RENESAS [ RENESAS TECHNOLOGY CORP ]
 浏览型号RQK0608BQDQSTL-E的Datasheet PDF文件第1页浏览型号RQK0608BQDQSTL-E的Datasheet PDF文件第2页浏览型号RQK0608BQDQSTL-E的Datasheet PDF文件第4页浏览型号RQK0608BQDQSTL-E的Datasheet PDF文件第5页浏览型号RQK0608BQDQSTL-E的Datasheet PDF文件第6页浏览型号RQK0608BQDQSTL-E的Datasheet PDF文件第7页浏览型号RQK0608BQDQSTL-E的Datasheet PDF文件第8页  
RQK0608BQDQS
Main Characteristics
Maximum Channel Power
Dissipation Curve
2
100
Operation in this area
is limited by R
DS(on)
Maximum Safe Operation Area
Channel Dissipation Pch (W)
1.5
Drain Current I
D
(A)
10
10
µs
100
µs
1
1 ms
100 ms
1
10 ms
0.1
0.01
Ta = 25°C
1 Shot Pulse
0.5
DC Operation
0
0
25
50
75
100
125
150
0.001
0.01
0.1
1
10
100
Ambient Temperature Ta (°C)
*When using the glass epoxy board (FR-4 40 x 40 x 1 mm)
Drain to Source Voltage V
DS
(V)
8V, 10 V
Typical Output Characteristics
4 V 2.4 V
2.6 V
2.2 V
Typical Transfer Characteristics
(1)
10
–25°C
25°C
10
Drain Current I
D
(A)
2.0 V
Drain Current I
D
(A)
8
2.8 V
Pulse Test
Tc = 25
°
C
8
6
1.8 V
6
Tc = 75°C
4
1.6 V
4
2
1.4 V
V
GS
= 0V
2
V
DS
= 10 V
Pulse Test
0
0
1
2
3
4
0
0
2
4
6
8
10
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Gate to Source Cutoff Voltage vs.
Gate to Source Cutoff Voltage
V
GS(off)
(V)
Typical Transfer Characteristics
(2)
1
V
DS
= 10 V
Pulse Test
Case Temperature
2.0
V
DS
= 10 V
Pulse Test
1.5
I
D
= 10 mA
1.0
Drain Current I
D
(A)
0.1
Tc = 75°C
0.01
25°C
0.001
–25°C
0.5
0.0001
0.00001
0
0.5
1
1 mA
0.1 mA
1.5
2
0
–25
0
25
50
75
100 125 150
Gate to Source Voltage V
GS
(V)
Case Temperature Tc (°C)
REJ03G1621-0100 Rev.1.00 Mar 03, 2008
Page 3 of 7