RQK0608BQDQS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
800
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Drain to Source Saturation Voltage
V
DS(on)
(mV)
Pulse Test
Tc = 25°C
1000
600
V
GS
= 2.5 V
400
I
D
= 3.2 A
2.4 A
100
10 V
4.5 V
200
1.6 A
1.0 A
0.5 A
Pulse Test
Tc = 25°C
10
0.1
1
10
0
0
2
4
6
8
10
Gate to Source Voltage
V
GS
(V)
Static Drain to Source on State Resistance
vs. Case Temperature (1)
300
Pulse Test
V
GS
=
4.5
V
250
200
I
D
= 3.2 A
2.4 A
1.6 A
1.0 A
0.5A
100
50
–25
Drain Current
I
D
(A)
Static Drain to Source on State Resistance
vs. Case Temperature (2)
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
Drain to Source on State Resistance
R
DS(on)
(m
Ω
)
300
Pulse Test
V
GS
= 2.5 V
I
D
= 3.2 A
2.4 A
1.6 A
250
200
0.5A
1.0 A
150
150
100
50
–25
0
25
50
75
100 125 150
0
25
50
75
100 125 150
Case Temperature
Tc (
°
C)
Forward Transfer Admittance vs.
Drain Current
Case Temperature
Tc (
°
C)
Zero Gate Voltage Drain current vs.
Case Temperature
10000
Pulse Test
V
GS
= 0 V
V
DS
= 60 V
100
Pulse Test
V
DS
= 10 V
–25°C
10
Zero Gate Voltage Drain current I
DSS
(nA)
Forward Transfer Admittance
|yfs| (S)
1000
100
25°C
1
Tc = 75°C
10
1
0.1
–25
0.1
0.01
0.1
1
10
0
25
50
75
100 125 150
Drain Current
I
D
(A)
Case Temperature
Tc (
°
C)
REJ03G1621-0100 Rev.1.00 Mar 03, 2008
Page 4 of 7
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