RQK0608BQDQS
Dynamic Input Characteristics
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
80
V
DD
= 10 V
25 V
50 V
V
DD
= 50 V
25 V
10 V
16
10000
V
GS
= 4.5 V, V
DD
= 10 V
Rg = 4.7
Ω,
duty
≤
1 %
Tc = 25°C
1000
tr
Switching Characteristics
60
12
Switching Time
t (ns)
40
8
100
td(off)
td(on)
10
tf
1
0.01
0.1
1
10
20
4
I
D
= 2.4 A
Tc = 25
°C
0
0
2
4
6
8
0
10
Gate Charge Qg (nC)
Drain Current
I
D
(A)
Typical Capacitance vs.
Drain to Source Voltage
1000
600
V
GS
= 0 V
f = 1 MHz
Input Capacitance vs.
Gate to Source Voltage
Ciss, Coss, Crss (pF)
Ciss
550
Ciss (pF)
Coss
Crss
500
100
450
400
10
0
10
20
30
40
50
60
V
DS
= 0
f = 1MHz
0
2
4
6
8 10
350
–10 –8 –6 –4 –2
Drain to Source Voltage
V
DS
(V)
Reverse Drain Current vs.
Source to Drain Voltage
10
Gate to Source Voltage V
GS
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
0.6
V
GS
= 0
0.5
I
D
= 10 mA
0.4
Reverse Drain Current I
DR
(A)
Pulse Test
Tc = 25°C
8
2.5 V
4.5 V
10 V
0V
2
V
GS
= –2.5, –4.5, –10 V
0
0
0.4
0.8
1.2
1.6
2.0
6
4
Body-Drain Diode Forward Voltage V
SDF
(V)
0.3
1 mA
0.2
–25
0
25
50
75
100 125 150
Source to Drain Voltage V
SD
(V)
Case Temperature Tc (°C)
REJ03G1621-0100 Rev.1.00 Mar 03, 2008
Page 5 of 7
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