AO3404A 参数 Datasheet PDF下载

AO3404A

N-Channel Enhancement Mode Field

Effect Transistor

C

Electrical Characteristics (T

J

=25° unless otherwise noted)

Symbol

Parameter

Conditions

I

D

=250µA, V

GS

=0V

V

DS

=30V, V

GS

=0V

T

J

=55°

C

V

DS

=0V, V

GS

= ±20V

V

DS

=V

GS

I

D

=250µA

V

GS

=4.5V, V

DS

=5V

V

GS

=10V, I

D

=5.8A

R

DS(ON)

g

FS

V

SD

I

S

Static Drain-Source On-Resistance

V

GS

=4.5V, I

D

=4.8A

Forward Transconductance

Diode Forward Voltage

VDS=5V, ID=5.8A

I

S

=1A,V

GS

=0V

T

J

=125°

C

1.5

64

18.4

26.2

24.5

22

0.75

1

2.5

373

V

GS

=0V, V

DS

=15V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

67

41

1.8

7.1

VGS=10V, VDS=15V, ID=5.8A

3.3

1.4

1.7

4.5

V

GS

=10V, V

DS

=15V, R

L

=2.6Ω,

R

GEN

=3Ω

I

F

=5.8A, dI/dt=100A/µs

2.4

14.8

2.5

10.5

4.5

12.6

6.5

2.8

11

448

25

36

35

2.1

Min

30

1

5

100

2.6

Typ

Max

Units

V

µA

nA

V

A

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

nC

ns

ns

ns

ns

ns

nC

STATIC PARAMETERS

Drain-Source Breakdown Voltage

BV

DSS

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=5.8A, dI/dt=100A/µs

A: The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The value

in any given application depends on the user's specific board design. The current rating is based on the t

≤

10s thermal resistance rating.

B: Repetitive rating, pulse width limited by junction temperature.

C. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

D. The static characteristics in Figures 1 to 6 are obtained using <300

µs

pulses, duty cycle 0.5% max.

E. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The SOA

curve provides a single pulse rating.

F.The current rating is based on the t≤ 10s thermal resistance rating.

Rev4 May.2012

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

2/4

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