AO3404A
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
4
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
8
V
DS
=15V
I
D
=5.8A
Capacitance (pF)
600
500
400
300
200
100
0
0
C
rss
10
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
C
oss
C
iss
100.0
30
10µs
10.0
I
D
(Amps)
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
Power (W)
100µs
1ms
10ms
0.1
T
J(Max)
=150°C
T
A
=25°C
DC
0.1s
10s
0
0.01
0.1
1
V
DS
(Volts)
10
100
0.001
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
0.1
20
1.0
10
0.0
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
4/4
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