AO3404A
N-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10V
50
40
I
D
(A)
4.5V
30
20
10
0
0
1
2
3
4
5
V
DS
(Volts)
Fig 1: On-Region Characteristics
45
Normalized On-Resistance
38
R
DS(ON)
(mΩ )
Ω
31
24
17
V
GS
=10V
10
0
5
10
15
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
I
D
(A)
9
125°C
6
V
GS
=3.5V
3
125°C
25°C
25°C
6V
12
15
V
DS
=5V
V
DS
=5V
0
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
1.8
1.6
1.4
1.2
1
0.8
0.6
0
25
50
75
V
GS
=4.5V
Id=4.8A
V
GS
=4.5V
373
67
41
V
GS
=10V
1.2
Id=5.8A
448
1.8
10.5
125
12.6
100
150
4.5
Temperature (°C)
175
Figure 4: On-Resistance vs. Junction Temperature
60
I
D
=5.8A
50
R
DS(ON)
(mΩ )
Ω
40
30
20
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
25°C
10
2
4
6
8
10
1.0E+01
1.0E+00
1.0E-01
I
S
(A)
125°C
125°C
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.0
0.4
0.6
0.8
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.2
1.0
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/4
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