GT50J325
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J325
High Power Switching Applications
Fast Switching Applications
·
·
·
The 4
th
generation
Enhancement-mode
Fast switching (FS): Operating frequency up to 50 kHz (reference)
·
High speed: t
f
= 0.05 µs (typ.)
·
Low switching loss: E
on
= 1.30 mJ (typ.)
: E
off
= 1.34 mJ (typ.)
·
·
Low saturation Voltage: V
CE (sat)
= 2.0 V (typ.)
FRD included between emitter and collector
Unit: mm
Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Collector current
Emitter-collector forward
current
Collector power dissipation
(Tc
=
25°C)
Junction temperature
Storage temperature range
DC
1 ms
DC
1 ms
Symbol
V
CES
V
GES
I
C
I
CP
I
F
I
FM
P
C
T
j
T
stg
Rating
600
±20
50
100
50
100
240
150
-55
to 150
Unit
V
V
A
JEDEC
JEITA
TOSHIBA
―
―
2-21F2C
A
W
°C
°C
Weight: 9.75 g
Thermal Characteristics
Characteristics
Thermal resistance (IGBT)
Thermal resistance (diode)
Symbol
R
th (j-c)
R
th (j-c)
Max
0.521
2.30
Unit
°C/W
°C/W
Equivalent Circuit
Collector
Gate
Emitter
1
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
