GT50J325
I
C
– V
CE
100
Common emitter
Tc
=
25°C
20
15
10
20
V
CE
– V
GE
Common emitter
Tc
= -40°C
(A)
80
(V)
Collector-emitter voltage
V
CE
16
12
I
C
Collector current
60
40
8
8
100
30
50
20
VGE
=
7 V
0
0
4
IC
=
10 A
1
2
3
4
5
0
0
4
8
12
16
20
Collector-emitter voltage
V
CE
(V)
Gate-emitter voltage V
GE
(V)
V
CE
– V
GE
20
Common emitter
Tc
=
25°C
20
V
CE
– V
GE
Common emitter
Tc
=
125°C
(V)
16
(V)
16
12
V
CE
Collector-emitter voltage
Collector-emitter voltage
V
CE
12
8
100
30
50
8
30
4
IC
=
10 A
100
50
4
IC
=
10 A
0
0
4
8
12
16
20
0
0
4
8
12
16
20
Gate-emitter voltage V
GE
(V)
Gate-emitter voltage V
GE
(V)
I
C
– V
GE
100
Common emitter
VCE
=
5 V
5
Common emitter
VGE
=
15 V
V
CE (sat)
– Tc
(A)
80
Collector-emitter saturation voltage
V
CE (sat)
(V)
4
100
70
I
C
60
3
50
2
30
IC
=
10 A
1
Collector current
40
20
Tc
=
125°C
25
0
0
4
8
12
16
20
-40
0
-60
-20
20
60
100
140
Gate-emitter voltage V
GE
(V)
Case temperature Tc
(°C)
3
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
