GT50J325
C – V
CE
30000
10000
Cies
500
Common emitter
RL
=
6
W
Tc
=
25°C
V
CE
, V
GE
– Q
G
20
(V)
400
16
(pF)
V
CE
3000
1000
300
Coes
100
30
10
0.1
Common emitter
VGE
=
0
f
=
1 MHz
Tc
=
25°C
0.3
1
3
10
30
Cres
Collector-emitter voltage
Capacitance C
300
300
200
200
100
VCE
=
100 V
12
8
4
100
300
1000
0
0
100
200
300
0
400
Collector-emitter voltage
V
CE
(V)
Gate charge
Q
G
(nC)
I
F
– V
F
100
Common collector
VGE
=
0
100
Common collector
di/dt
= -100
A/ms
VGE
=
0
: Tc
=
25°C
: Tc
=
125°C
t
rr
, I
rr
– I
F
10000
(A)
80
30
3000
(A)
Reverse recovery current I
rr
Forward current I
F
10
60
Tc
=
125°C
40
3
trr
300
-40
1
100
20
25
0.3
30
0
0
1
2
3
4
5
0.1
0
10
20
30
40
10
50
Forward voltage
V
F
(V)
Forward current
I
F
(A)
Safe operating area
300
100
IC max (pulse)*
IC max (continuous)
300
100
Reverse bias SOA
50
ms*
(A)
(A)
30
10
3
*:
Single pulse
1
0.3
0.1
1
Tc
=
25°C
Curves must be
derated linearly with
increase in
temperature.
3
10
30
100
DC operation
Collector current I
C
100
ms*
30
10
3
1
0.3
0.1
1
Tj
<
125°C
=
VGE
=
15 V
RG
=
13
W
3
10
30
100
300
1000
Collector current
I
C
1 ms*
10 ms*
300
1000
Collector-emitter voltage
V
CE
(V)
Collector-emitter voltage
V
CE
(V)
5
Reverse recovery time
Irr
1000
t
rr
(ns)
Gate-emitter voltage V
GE
(V)
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
