TC55V8512J/FT-12,-15
AC CHARACTERISTICS
(Ta
=
0° to 70°C
READ CYCLE
TC55V8512J/FT
SYMBOL
PARAMETER
MIN
t
RC
t
ACC
t
CO
t
OE
t
OH
t
COE
t
OEE
t
COD
t
ODO
Read Cycle Time
Address Access Time
Chip Enable Access Time
Output Enable Access Time
Output Data Hold Time from Address Change
Output Enable Time from Chip Enable
Output Enable Time from Output Enable
Output Disable Time from Chip Enable
Output Disable Time from Output Enable
12
3
3
1
-12
MAX
12
12
6
7
7
MIN
15
4
4
1
-15
MAX
15
15
8
8
8
ns
UNIT
(See Note 1)
, V
DD
=
3.3 V
±
0.3 V)
WRITE CYCLE
TC55V8512J/FT
SYMBOL
PARAMETER
MIN
t
WC
t
WP
t
CW
t
AW
t
AS
t
WR
t
DS
t
DH
t
OEW
t
ODW
Write Cycle Time
Write Pulse Width
Chip Enable to End of Write
Address Valid to End of Write
Address Setup Time
Write Recovery Time
Data Setup Time
Data Hold Time
Output Enable Time from Write Enable
Output Disable Time from Write Enable
12
8
10
10
0
0
7
0
1
-12
MAX
7
MIN
15
9
12
12
0
0
8
0
1
-15
MAX
8
ns
UNIT
AC TEST CONDITIONS
PARAMETER
Input Pulse Level
Input Pulse Rise and Fall Time
Input Timing Measurement
Reference Level
Output Timing Measurement
Reference Level
Output Load
TEST CONDITION
3.0 V/ 0.0 V
2 ns
1.5 V
Fig.1
3.3 V
1200
Ω
I/O pin
R
L
=
50
Ω
V
L
=
1.5 V
1.5 V
Fig.1
870
Ω
I/O pin Z
0
=
50
Ω
C
L
=
30 pF
C
L
=
5 pF
(For t
COE
, t
OEE
, t
COD
,
t
ODO
, t
OEW
and t
ODW
)
2001-12-19
4/10
TOSHIBA [ TOSHIBA SEMICONDUCTOR ]
