CSD16403Q5A应用文章市场行情现货热卖使用介绍供应商报价-中国IC网-芯三七

当前位置：IC37首页_>C字母起始型号索引_>C字母起始型号索引第670页更新时间：2024-12-04 15:35:19

产品型号CSD16403Q5A的概述

CSD16403Q5A 芯片概述 CSD16403Q5A 是由德州仪器（Texas Instruments, TI）开发的一款高效双通道 MOSFET（金属氧化物半导体场效应管）。该芯片在电源管理和电压调节方面展现出了优异的性能，广泛应用于各类电力电子设备中，如开关电源、DC-DC 转换器和电池管理系统等。结合其低导通电阻、快速开关速度以及低栅极电荷特性，CSD16403Q5A 特别适合用于需要高效能和高可靠性的场合。 CSD16403Q5A 的详细参数 CSD16403Q5A 的主要参数包括： 1. 最大电压（VDS）：30V 2. 最大电流（ID）：68A（在适当的散热条件下） 3. 导通电阻（RDS(on)）：低达 4.2mΩ 4. 开关时间（td(on) 与 td(off)）：典型值为 22ns 和 45ns 5. 栅极电荷（QG）：典型值为 15nC 6. 工作温度范围：-5...

产品型号CSD16403Q5A的Datasheet PDF文件预览

CSD16403Q5A

www.ti.com

SLPS201A –AUGUST 2009–REVISED SEPTEMBER 2010

N-Channel NexFET™ Power MOSFETs

Check for Samples: CSD16403Q5A

FEATURES

PRODUCT SUMMARY

•

Ultra Low Q_gand Q_gd

Low Thermal Resistance

Avalanche Rated

V_DS

Q_g

Drain to Source Voltage

Gate Charge Total (4.5V)

Gate Charge Gate to Drain

13.3

3.5

mΩ

Q_gd

Pb Free Terminal Plating

RoHS Compliant

V_GS= 4.5V

V_GS= 10V

1.6

2.9

2.2

R_DS(on)Drain to Source On Resistance

V_GS(th)Threshold Voltage

Halogen Free

SON 5mm x 6mm Plastic Package

ORDERING INFORMATION

Device

Package

Media

Qty

Ship

APPLICATIONS

SON 5X6 Plastic

Package

13-inch

reel

Tape and

Reel

CSD16403Q5A

2500

•

Point-of-Load Synchronous Buck Converter

for Applications in Networking, Telecom and

Computing Systems

ABSOLUTE MAXIMUM RATINGS

T_A= 25°C unless otherwise stated

•

Optimized for Control FET Applications

VALUE

UNIT

V_DS

V_GS

Drain to Source Voltage

DESCRIPTION

Gate to Source Voltage

+16 / –12

100

The NexFET™ power MOSFET has been designed

to minimize losses in power conversion applications.

Continuous Drain Current, T_C= 25°C

Continuous Drain Current⁽¹⁾

Pulsed Drain Current, T_A= 25°C⁽²⁾

Power Dissipation⁽¹⁾

I_D

I_DM

P_D

T_J,

184

Top View

3.1

Operating Junction and Storage

T_STGTemperature Range

–55 to 150

224

°C

Avalanche Energy, single pulse

I_D= 67A, L = 0.1mH, R_G= 25Ω

E_AS

(1) R_qJA= 41°C/W on 1in²Cu FR4 PCB.

(2) Pulse width ≤300ms, duty cycle ≤2%

P0093-01

R_DS(ON)vs V_GS

Gate Charge

= 20A

= 12.5V

= 125°C

= 25°C

12 15 18 21 24 27 30 33

− Gate to Source Voltage − V

Q − Gate Charge − nC

G006

G003

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas

Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

NexFET is a trademark of Texas Instruments.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.

CSD16403Q5A

SLPS201A –AUGUST 2009–REVISED SEPTEMBER 2010

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ELECTRICAL CHARACTERISTICS

(T_A= 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

BV_DSS

I_DSS

Drain to Source Voltage

V_GS= 0V, I_D= 250mA

Drain to Source Leakage Current

Gate to Source Leakage Current

Gate to Source Threshold Voltage

V_GS= 0V, V_DS= 20V

V_DS= 0V, V_GS= +16/-12V

V_DS= V_GS, I_D= 250mA

V_GS= 4.5V, I_D= 20A

V_GS= 10V, I_D= 20A

V_DS= 15V, I_D= 20A

100

1.9

3.7

2.8

I_GSS

V_GS(th)

1.2

1.6

2.9

2.2

mΩ

R_DS(on)

g_fs

Drain to Source On Resistance

Transconductance

Dynamic Characteristics

C_ISS

C_OSS

C_RSS

R_g

Input Capacitance

2040

1600

115

1.2

2660

2080

160

2.4

Ω

Output Capacitance

Reverse Transfer Capacitance

Series Gate Resistance

Gate Charge Total (4.5V)

Gate Charge Gate to Drain

Gate Charge Gate to Source

Gate Charge at Vth

Output Charge

V_GS= 0V, V_DS= 12.5V , f = 1MHz

Q_g

13.3

3.5

Q_gd

Q_gs

Qg(th)

Q_OSS

t_d(on)

t_r

V_DS= 12.5V, I_D= 20A

V_DS= 13.5V, V_GS= 0V

5.5

3.1

Turn On Delay Time

Rise Time

11.8

18.3

15.2

9.2

V_DS= 12.5V, V_GS= 4.5V, I_D= 20A,

R_G= 2Ω

t_d(off)

t_f

Turn Off Delay Time

Fall Time

Diode Characteristics

V_SD

Q_rr

t_rr

Diode Forward Voltage

I_S= 20A, V_GS= 0V

0.8

1.0

Reverse Recovery Charge

Reverse Recovery Time

V_DD= 13.5V, I_F= 20A, di/dt = 300A/ms

THERMAL CHARACTERISTICS

(T_A= 25°C unless otherwise stated)

PARAMETER

Thermal Resistance Junction to Case⁽¹⁾

Thermal Resistance Junction to Ambient^{(1) (2)}

MIN

TYP

MAX

1.8

UNIT

°C/W

R _qJC

R _qJA

(1)

R_qJCis determined with the device mounted on a 1 inch square 2 oz. Cu pad on a 1.5 × 1.5 in 0.060 inch thick FR4 board. R_qJCis

specified by design while R_qJAis determined by the user’s board design.

(2) Device mounted on FR4 Material with 1 inch²of 2 oz. Cu.

Submit Documentation Feedback

Product Folder Link(s): CSD16403Q5A

CSD16403Q5A

www.ti.com

SLPS201A –AUGUST 2009–REVISED SEPTEMBER 2010

GATE

Source

GATE

Source

Max R_qJA= 118°C/W

when mounted on

minimum pad area of 2

oz. Cu.

Max R_qJA= 51°C/W

when mounted on 1

inch²of 2 oz. Cu.

DRAIN

M0137-02

M0137-01

TYPICAL MOSFET CHARACTERISTICS

(T_A= 25°C unless otherwise stated)

0.5

0.3

0.1

0.05

Duty Cycle = t₁/t₂

0.02

0.01

0.001

0.0001

t₁

t₂

Single Pulse

_qJA= 94°C/W (min Cu)

T_J= P ´ Z_qJA´ R_qJA

0.001

0.01

0.1

100

t_p– Pulse Duration – s

G012

Figure 1. Transient Thermal Impedance

Submit Documentation Feedback

Product Folder Link(s): CSD16403Q5A

CSD16403Q5A

SLPS201A –AUGUST 2009–REVISED SEPTEMBER 2010

www.ti.com

TYPICAL MOSFET CHARACTERISTICS (continued)

(T_A= 25°C unless otherwise stated)

TEXT ADDED FOR SPACING

= 5V

= 3V

= 10V

= 4.5V

= 125°C

= 3.5V

= 25°C

= 2.5V

2.5

= −55°C

0.0

0.5

1.0

1.5

2.0

3.0

1.0

1.5

2.0

2.5

3.0

3.5

4.0

− Drain to Source Voltage − V

− Gate to Source Voltage − V

G001

G002

Figure 2. Saturation Characteristics

Figure 3. Transfer Characteristics

TEXT ADDED FOR SPACING

= 20A

f = 1MHz

= 0V

= 12.5V

OSS

= C + C

DS GD

ISS

= C

+ C

GD GS

RSS

= C

12 15 18 21 24 27 30 33

− Gate Charge − nC

− Drain to Source Voltage − V

G003

G004

Figure 4. Gate Charge

Figure 5. Capacitance

TEXT ADDED FOR SPACING

2.00

1.75

1.50

1.25

1.00

0.75

0.50

= 250µA

I = 20A

= 125°C

= 25°C

−75

−25

125

175

− Case Temperature − °C

− Gate to Source Voltage − V

G005

G006

Figure 6. Threshold Voltage vs Temperature

Figure 7. On Resistance vs Gate Voltage

Submit Documentation Feedback

Product Folder Link(s): CSD16403Q5A

CSD16403Q5A

www.ti.com

SLPS201A –AUGUST 2009–REVISED SEPTEMBER 2010

TYPICAL MOSFET CHARACTERISTICS (continued)

(T_A= 25°C unless otherwise stated)

TEXT ADDED FOR SPACING

100

1.6

1.4

1.2

1.0

0.8

0.6

= 20A

= 10V

= 125°C

0.1

= 25°C

0.01

0.001

0.0001

−75

−25

125

175

0.0

0.2

0.4

0.6

0.8

1.0

1.2

− Case Temperature − °C

− Source to Drain Voltage − V

G007

G008

Figure 8. On Resistance vs Temperature

Figure 9. Typical Diode Forward Voltage

TEXT ADDED FOR SPACING

100

1ms

= 25°C

10ms

= 125°C

100ms

Area Limited

by R

DS(on)

0.1

0.01

Single Pulse

= 94^oC/W (min Cu)

qJA

0.01

0.1

100

0.01

0.1

100

− Drain To Source Voltage − V

− Time in Avalanche − ms

(AV)

G010

G009

Figure 10. Maximum Safe Operating Area

Figure 11. Single Pulse Unclamped Inductive Switching

TEXT ADDED FOR SPACING

120

100

−50

100

150

200

− Case Temperature − °C

G011

Figure 12. Maximum Drain Current vs Temperature

Submit Documentation Feedback

Product Folder Link(s): CSD16403Q5A

CSD16403Q5A

SLPS201A –AUGUST 2009–REVISED SEPTEMBER 2010

www.ti.com

MECHANICAL DATA

Q5A Package Dimensions

Top View

Side View

Bottom View

Front View

M0135-01

DIM

MILLIMETERS

NOM

MIN

0.90

0.33

0.20

4.80

3.61

5.90

5.70

3.38

MAX

1.10

0.51

0.30

5.00

3.96

6.10

5.80

3.78

1.00

0.41

0.25

4.90

3.81

6.00

5.75

3.58

1.27 BSC

0.51

0.41

1.10

0.51

0.06

0°

0.61

0.13

0.71

0.20

12°

For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through

PCB Layout Techniques.

Submit Documentation Feedback

Product Folder Link(s): CSD16403Q5A

CSD16403Q5A

www.ti.com

SLPS201A –AUGUST 2009–REVISED SEPTEMBER 2010

MILLIMETERS

INCHES

DIM

Recommended PCB Pattern

MIN

MAX

6.305

4.56

0.7

MIN

MAX

0.248

0.18

6.205

4.46

0.65

0.62

0.63

0.7

0.244

0.176

0.026

0.024

0.025

0.028

0.026

0.024

0.193

0.176

0.18

0.028

0.026

0.027

0.031

0.028

0.026

0.197

0.18

0.67

0.68

0.8

0.65

0.62

4.9

0.7

0.67

F10

F11

4.46

4.56

F10

M0139-01

Q5A Tape and Reel Information

4.00 0.10 ꢀ(SS ꢁNoS 1ꢂ

0.30 0.05

2.00 0.05

+0.10

–0.00

Ø 1.50

8.00 0.10

R 0.30 MAX

Ø 1.50 MIꢁ

R 0.30 TYP

A0 = 6.50 0.10

B0 = 5.30 0.10

K0 = 1.40 0.10

M0138-01

Notes:

1. 10 sprocket hole pitch cumulative tolerance ±0.2

2. Camber not to exceed 1mm IN 100mm, noncumulative over 250mm

3. Material:black static dissipative polystyrene

4. All dimensions are in mm (unless otherwise specified)

5. A0 and B0 measured on a plane 0.3mm above the bottom of the pocket

6. MSL1 260°C (IR and Convection) PbF Reflow Compatible

REVISION HISTORY

Changes from Original (August 2009) to Revision A

Page

•

Deleted the Package Marking Information section ............................................................................................................... 7

Submit Documentation Feedback

Product Folder Link(s): CSD16403Q5A

PACKAGE MATERIALS INFORMATION

www.ti.com

7-Apr-2011

TAPE AND REEL INFORMATION

*All dimensions are nominal

Device

Package Package Pins

Type Drawing

SPQ

Reel

Pin1

Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant

(mm) W1 (mm)

CSD16403Q5A

SON

DQJ

2500

330.2

12.4

6.5

5.3

1.4

8.0

12.0

Pack Materials-Page 1

PACKAGE MATERIALS INFORMATION

www.ti.com

7-Apr-2011

*All dimensions are nominal

Device

Package Type Package Drawing Pins

SON DQJ

SPQ

Length (mm) Width (mm) Height (mm)

347.0 342.0 55.0

CSD16403Q5A

2500

Pack Materials-Page 2

IMPORTANT NOTICE

Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements,

and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should

obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are

sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.

TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard

warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where

mandated by government requirements, testing of all parameters of each product is not necessarily performed.

TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and

applications using TI components. To minimize the risks associated with customer products and applications, customers should provide

adequate design and operating safeguards.

TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right,

or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information

published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a

warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual

property of the third party, or a license from TI under the patents or other intellectual property of TI.

Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied

by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive

business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional

restrictions.

Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all

express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not

responsible or liable for any such statements.

TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably

be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing

such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products

and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be

provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in

such safety-critical applications.

TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are

specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military

specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at

the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.

TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are

designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated

products in automotive applications, TI will not be responsible for any failure to meet such requirements.

Following are URLs where you can obtain information on other Texas Instruments products and application solutions:

Products

Applications

Audio

www.ti.com/audio

amplifier.ti.com

dataconverter.ti.com

www.dlp.com

Communications and Telecom www.ti.com/communications

Amplifiers

Data Converters

DLP® Products

DSP

Computers and Peripherals

Consumer Electronics

Energy and Lighting

Industrial

www.ti.com/computers

www.ti.com/consumer-apps

www.ti.com/energy

dsp.ti.com

www.ti.com/industrial

www.ti.com/medical

www.ti.com/security

Clocks and Timers

Interface

www.ti.com/clocks

interface.ti.com

logic.ti.com

Medical

Security

Logic

Space, Avionics and Defense www.ti.com/space-avionics-defense

Power Mgmt

power.ti.com

Transportation and

Automotive

www.ti.com/automotive

Microcontrollers

RFID

microcontroller.ti.com

www.ti-rfid.com

Video and Imaging

Wireless

www.ti.com/video

www.ti.com/wireless-apps

RF/IF and ZigBee® Solutions www.ti.com/lprf

TI E2E Community Home Page

e2e.ti.com

Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265

CSD16403Q5A相关文章

配单直通车

北京元坤伟业科技有限公司服务专线: 010-62104931621064316210489162104791 在线联系:

QQ：857273081 复制

QQ：1594462451 复制

深圳市中利达电子科技有限公司服务专线: 0755-13686833545 在线联系:

QQ：1902134819 复制

QQ：2881689472 复制

深圳市芯福林电子有限公司服务专线: 13418564337 在线联系:

QQ：2881495808 复制

QQ：308365177 复制

首天国际（深圳）科技有限公司服务专线: 0755-82807802/82807803 在线联系:

QQ：528164397 复制

QQ：1318502189 复制

柒号芯城电子商务（深圳）有限公司服务专线: 18922803401 在线联系:

QQ：2881677436 复制

QQ：2881620402 复制

CSD16403Q5A产品参数

型号:	CSD16403Q5A
Brand Name：	Texas Instruments
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	TEXAS INSTRUMENTS INC
包装说明：	6 X 5 MM, ROHS COMPLIANT, PLASTIC, SON-8
针数：	8
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
HTS代码：	8541.29.00.95
Factory Lead Time：	16 weeks
风险等级：	1.7
Is Samacsys：	N
其他特性：	AVALANCHE RATED
雪崩能效等级（Eas）：	224 mJ
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	25 V
最大漏极电流 (Abs) (ID)：	100 A
最大漏极电流 (ID)：	28 A
最大漏源导通电阻：	0.0037 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：	160 pF
JESD-30 代码：	R-PDSO-N8
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	1
端子数量：	5
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
最低工作温度：	-55 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	3.1 W
最大脉冲漏极电流 (IDM)：	184 A
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	NO LEAD
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

电子百科

产品导航

产品型号CSD16403Q5A的概述

产品型号CSD16403Q5A的Datasheet PDF文件预览

CSD16403Q5A相关产品

CSD16403Q5A相关文章

IC37:专业IC行业平台