FDG316P现货热卖使用介绍供应商报价哪里找芯片批发报价-中国IC网-芯三七

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产品型号FDG316P的概述

芯片FDG316P的概述 FDG316P是一款广泛应用于各类电子设备中的功率MOSFET（金属氧化物半导体场效应晶体管）。其主要特点包括低导通电阻、高开关速度以及较高的临界电压，广泛适用于开关电源、电机驱动、电源管理等场合。由于其卓越的性能和良好的热稳定性，FDG316P在现代电子产品中占据了重要的地位。芯片FDG316P的详细参数 FDG316P的技术参数表明，该器件通常具有以下几个关键参数： 1. 最大漏源电压（V_DS）：60V 2. 最大栅源电压（V_GS）：±20V 3. 连续漏电流（I_D）：32A（在环境温度25℃下） 4. 最大功耗（P_D）：94W（在环境温度25℃下） 5. 导通电阻（R_DS(on)）：主要导通电阻为20mΩ（在V_GS = 10V条件下） 6. 开关速度：具备较快速的开关特性，适合高频应用。以上参数保证了FDG316P在高功率应用中无论是从效...

产品型号FDG316P的Datasheet PDF文件预览

December 2001

FDG316P

P-Channel Logic Level PowerTrench MOSFET

General Description

Features

This P-Channel Logic Level MOSFET is produced using

Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize

on-state resistance and yet maintain superior

switching performance.

• -1.6 A, -30 V. R_DS(ON)= 0.19 Ω @ V_GS= -10 V

R_DS(ON)= 0.30 Ω @ V_GS= -4.5 V.

• Low gate charge (3.5nC typical).

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

• High performance trench technology for extremely low

R_DS(ON)

• Compact industry standard SC70-6 surface mount

package.

Applications

• DC/DC converter

• Load switch

• Power Management

SC70-6

T_A= 25°C unless otherwise noted

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

V_DSS

Drain-Source Voltage

-30

V_GSS

I_D

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

±20

-1.6

-6

(Note 1a)

P_D

(Note 1a)

(Note 1b)

Power Dissipation for Single Operation

0.75

0.48

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

_θJA

°C/W

(Note 1b)

Thermal Resistance, Junction-to-Ambient

260

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape Width

Quantity

FDG316P

7’’

8mm

3000 units

.36

2001 Fairchild Semiconductor Corporation

FDG316P Rev. D

Electrical Characteristics

T_A= 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

Min Typ Max Units

Off Characteristics

BV_DSS

Drain-Source Breakdown Voltage

-30

V_GS= 0 V, I_D= -250 µA

Breakdown Voltage Temperature

Coefficient

-34

∆BV^DSS

∆T_J

I_D= -250 µA, Referenced to 25°C

mV/°C

I_DSS

Zero Gate Voltage Drain Current

Gate-Body Leakage Forward

Gate-Body Leakage Reverse

V_DS= -24 V, V_GS= 0 V

V_GS= 16 V, V_DS= 0 V

V_GS= -16 V, V_DS= 0 V

-1

µA

I_GSS

100

-100

On Characteristics (Note 2)

V_GS(th)

Gate Threshold Voltage

-1

-3

-1.6

3.5

-3

V_DS= V_GS, I_D= -250 µA

Gate Threshold Voltage

Temperature Coefficient

∆V^GS(th)

∆T_J

I_D= -250 µA, Referenced to 25°C

mV/°C

R_DS(on)

Static Drain-Source

On-Resistance

V_GS= -10 V, I_D= -1.6 A

0.16

0.22

0.23

0.19

0.31

0.30

Ω

_GS= -10 V, I_D= -1.6 A,T_J=125°C

_GS= -4.5 V, I_D= -1.3 A

I_D(on)

g_FS

On-State Drain Current

V_GS= -4.5 V, V_DS= -5 V

Forward Transconductance

V_DS= -5 V, I_D= -0.5 A

Dynamic Characteristics

C_iss

C_oss

C_rss

Input Capacitance

_DS= -15 V, V_GS= 0 V,

165

f = 1.0 MHz

Output Capacitance

Reverse Transfer Capacitance

Switching Characteristics (Note 2)

t_d(on)

t_r

t_d(off)

t_f

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DD= -15 V, I_D= -1 A,

_GS= -10 V, R_GEN= 6 Ω

Q_g

_DS= -15 V, I_D= -1.6 A,

3.5

0.6

0.8

V_GS= -10 V

Q_gs

Q_gd

Drain-Source Diode Characteristics and Maximum Ratings

I_S

Maximum Continuous Drain-Source Diode Forward Current

-0.42

-1.2

V_SD

Drain-Source Diode Forward

Voltage

V_GS= 0 V, I_S= -0.42 A

(Note 2)

0.75

Notes:

1. R_θJAis the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface

of the drain pins. R_θJCis guaranteed by design while R_θCAis determined by the user's board design.

a) 170°C/W when mounted on a 1 in²pad of 2oz copper.

b) 260°C/W when mounted on a minimum pad.

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

FDG316P Rev. D

Typical Characteristics

1.8

1.6

1.4

1.2

V_GS= -10V

-8.0V

-7.0V

-6V

-5.0V

V_GS= -4.0V

-4.5V

-5.0V

-4.0V

-6.0V

-3.5V

-3.0V

-2.5V

-7.0V

-8.0V

-10V

0.8

150

-V_DS, DRAIN-SOURCE VOLTAGE (V)

-I_D, DIRAIN CURRENT (A)

Figure 2. On-Resistance Variation

with Drain Current and Gate Voltage.

Figure 1. On-Region Characteristics.

1.6

1.4

1.2

0.6

0.5

0.4

0.3

0.2

0.1

I_D= -0.8A

I_D= -1.6A

V_GS= -10V

T_A= 125^oC

T_A= 25^oC

0.8

0.6

-50

-25

100

125

T_J, JUNCTION TEMPERATURE (^oC)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation

with Temperature.

Figure 4. On-Resistance Variation

with Gate-to-Source Voltage.

T_A= -55^oC

25^oC

V_GS= 0V

V_DS= -5V

125^oC

T_A= 125^oC

0.1

25^oC

-55^oC

0.01

0.001

0.0001

0.2

0.4

0.6

0.8

1.2

1.4

1.6

-V_SD, BODY DIODE FORWARD VOLTAGE (V)

-V_GS, GATE TO SOURCE VOLTAGE (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

and Temperature.

Figure 5. Transfer Characteristics.

FDG316P Rev. D

Typical Characteristics (continued)

250

200

150

100

f = 1MHz

V_GS= 0 V

I_D= -1.6A

V_DS= 5V

10V

C_ISS

15V

C_OSS

C_RSS

0.5

1.5

2.5

3.5

Q_g, GATE CHARGE (nC)

-V_DS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate-Charge Characteristics.

Figure 8. Capacitance Characteristics.

SINGLE PULSE

R_θ_JA= 260^oC/W

T_A= 25^oC

R_DS(ON)LIMIT

1ms

10ms

100ms

10s

0.1

0.01

V_GS= -10V

SINGLE PULSE

R_θJA= 260^oC/W

T_A= 25^oC

0.1

100

0.0001

0.001

0.01

0.1

100

1000

-V_DS, DRAIN-SOURCE VOLTAGE (V)

SINGLE PULSE TIME (SEC)

Figure 10. Single Pulse Maximum

Power Dissipation.

Figure 9. Maximum Safe Operating Area.

D = 0.5

0.5

(t) = r(t) * R

0.2

=260°C/W

0.1

P(pk)

0.05

0.01

0.02

Single Pulse

T - T = P * R

(t)

0.01

Duty Cycle, D = t / t

0.005

0.0001

0.001

0.01

0.1

, TIME (sec)

100

300

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient themal response will change depending on the circuit board design.

FDG316P Rev. D

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

SMART START™

STAR*POWER™

Stealth™

VCX™

FAST

ACEx™

Bottomless™

CoolFET™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

FASTr™

FRFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

LittleFET™

MicroFET™

MicroPak™

MICROWIRE™

CROSSVOLT™

DenseTrench™

DOME™

POP™

Power247™

PowerTrench^â

QFET™

EcoSPARK™

E²CMOS^TM

TinyLogic™

QS™

EnSigna^TM

TruTranslation™

UHC™

QT Optoelectronics™

Quiet Series™

SILENTSWITCHER^â

FACT™

FACT Quiet Series™

UltraFET^â

STAR*POWER is used under license

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITYARISING OUT OF THE APPLICATION OR USE OFANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICESORSYSTEMSWITHOUTTHEEXPRESSWRITTENAPPROVALOFFAIRCHILDSEMICONDUCTORCORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or

In Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Obsolete

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Rev. H4

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