HMC490芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号HMC490的概述

HMC490概述 HMC490是一款高性能的射频放大器（RF Amplifier），由Hittite Microwave Corporation（现已成为Analog Devices的一部分）生产。此芯片专为频率范围为0.1 GHz至20 GHz的应用设计，能够提供出色的增益和线性度。HMC490的设计特别适用于需要高增益和低噪声的应用，如无线通信、雷达、以及测试和测量设备。在射频电路中，HMC490被广泛用于信号放大，它不仅能够提升信号的强度，还能保持信号的完整性。其优异的性能和稳定的工作特性，使得HMC490在现代无线系统中占据了重要的地位。 HMC490的详细参数 HMC490的主要参数包括： - 频率范围：0.1 GHz 至 20 GHz - 增益：大约 18 dB - 输入和输出回传损失：大于 10 dB - 噪声系数：小于 4 dB - 功率增益：1 dB 压缩点功率约为...

产品型号HMC490的Datasheet PDF文件预览

HMC490

v01.1003

MICROWAVE CORPORATION

GaAs PHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 17 GHz

Typical Applications

Features

The HMC490 is ideal for use as either a LNA or

driver ampliﬁer for:

Noise Figure: 2 dB

+26 dBm P1dB

• Point-to-Point Radios

• Point-to-Multi-Point Radios

• VSAT

Gain: 27 dB

+35 dBm Output IP3

+5V Supply

• Military & Space

50 Ohm Matched Input/Output

Functional Diagram

General Description

The HMC490 is a high dynamic range GaAs

PHEMT MMIC Low Noise Ampliﬁer which

operates between 12 and 17 GHz. The HMC490

provides 27 dB of gain, 2 dB noise ﬁgure and an

output IP3 of 35 dBm from a +5.0V supply voltage.

The ampliﬁer chip can easily be integrated into

Multi-Chip-Modules (MCMs) due to its small size.

All data is tested with the chip in a 50 Ohm test

ﬁxture connected via 0.025mm (1 mil) diameter

wire bonds of minimal length 0.31mm (12 mils).

Electrical Speciﬁcations,T_A= +25° C, Vdd = 5V, Idd = 200 mA*

Parameter

Min.

Typ.

12 - 14

26.5

0.03

2.5

Max.

Min.

Typ.

14 - 17

Max.

0.04

Units

GHz

Frequency Range

Gain

Gain Variation Over Temperature

Noise Figure

0.04

0.03

2.0

dB/ °C

Input Return Loss

Output Return Loss

Output Power for 1 dB Compression (P1dB)

Saturated Output Power (Psat)

Output Third Order Intercept (IP3)

Supply Current (Idd)(Vdd = 5V, Vgg = -0.8V Typ.)

dBm

200

* Adjust Vgg between -2.0 to 0V to achieve Idd = 200 mA typical.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 104

HMC490

v01.1003

MICROWAVE CORPORATION

GaAs PHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 17 GHz

GaAs MMIC SUB-HARMONICALLY _GP_aU_inM_vP_s.E_TD_emM_peI_rX_aE_tuR_re17 - 25 GHz

Broadband Gain & Return Loss

S21

S11

S22

+25 C

+85 C

-55 C

-5

-10

-15

-20

FREQUENCY (GHz)

Input Return Loss vs.Temperature

Output Return Loss vs.Temperature

+25 C

-2

-4

+85 C

-4

-8

-55 C

-6

-8

-12

-10

-12

-14

+25 C

+85 C

-16

-55 C

-20

FREQUENCY (GHz)

Noise Figure vs.Temperature

Output IP3 vs.Temperature

+25 C

+85 C

-55 C

+25 C

+85 C

-55 C

FREQUENCY (GHz)

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 105

HMC490

v01.1003

MICROWAVE CORPORATION

GaAs PHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 17 GHz

P1dB vs.Temperature

Psat vs.Temperature

+25 C

+85 C

-55 C

+25 C

+85 C

-55 C

FREQUENCY (GHz)

Gain & Noise Figure vs. Supply Voltage

@ 14 GHz, Idd= 200 mA

Power Compression @ 14 GHz

4.5

3.5

2.5

1.5

Pout (dBm)

Gain (dB)

PAE (%)

0.5

Gain

Noise Figure

-20 -18 -16 -14 -12 -10 -8 -6 -4 -2

3.25 3.5 3.75

4.25 4.5 4.75

Vdd (Vdc)

5.25 5.5

INPUT POWER (dBm)

Gain, Noise Figure & IP3 vs.

Supply Current @ 14 GHz, Vdd= 5V*

Reverse Isolation vs.Temperature

4.5

-10

-20

-30

-40

-50

-60

-70

+25 C

+85 C

-55 C

3.5

2.5

1.5

Gain

OIP3

Noise Figure

0.5

100

125

150

175

200

Idd (mA)

FREQUENCY (GHz)

* Idd is controlled by varying Vgg

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 106

HMC490

v01.1003

MICROWAVE CORPORATION

GaAs PHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 17 GHz

Typical Supply Current vs. Vdd

Absolute Maximum Ratings

Drain Bias Voltage (Vdd1, Vdd2, Vdd3)

Gate Bias Voltage (Vgg1, Vgg2, Vgg3)

+5.5 Vdc

Vdd (Vdc)

+4.5

Idd (mA)

191

-4.0 to 0 Vdc

RF Input Power (RFin)(Vdd = +5.0 Vdc) +10 dBm

+5.0

200

Channel Temperature

175 °C

2.65 W

+5.5

208

Continuous Pdiss (T= 85 °C)

(derate 29 mW/°C above 85 °C)

+3.0

189

+3.5

200

Thermal Resistance

(channel to die bottom)

34 °C/W

+4.0

208

Storage Temperature

Operating Temperature

-65 to +150 °C

-55 to +85 °C

Note: Ampliﬁer will operate over full voltage ranges shown above.

Vgg adjusted to achieve Idd= 200 mA at +5.0V and +3.5V.

Outline Drawing

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM]

2. DIE THICKNESS IS .004”

3. TYPICAL BOND IS .004” SQUARE

4. BACKSIDE METALLIZATION: GOLD

5. BOND PAD METALLIZATION: GOLD

6. BACKSIDE METAL IS GROUND.

7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 107

HMC490

v01.1003

MICROWAVE CORPORATION

GaAs PHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 17 GHz

Pad Descriptions

Pin Number

Function

Description

Interface Schematic

Gate control for ampliﬁer. Adjust to achieve Id of 200 mA.

Please follow “MMIC Ampliﬁer Biasing Procedure”

Application Note. External bypass capacitors of 100 pF and

0.01 µF are required.

1,8, 7

Vgg1, 2, 3

This pad is AC coupled and matched to 50 Ohms from

12 - 17 GHz.

RF IN

Power Supply Voltage for the ampliﬁer. External bypass

capacitors of 100 pF and 0.01 µF are required.

3, 4, 5

Vdd1, 2, 3

This pad is AC coupled and matched to 50 Ohms from

12 - 17 GHz.

RF OUT

GND

Die Bottom

Die Bottom must be connected to RF/DC ground.

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 108

HMC490

v01.1003

MICROWAVE CORPORATION

GaAs PHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 17 GHz

Assembly Diagram

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 109

HMC490

v01.1003

MICROWAVE CORPORATION

GaAs PHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 17 GHz

Mounting & Bonding Techniques for Millimeterwave GaAs MMICs

The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Han-

dling, Mounting, Bonding Note).

50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin ﬁlm substrates are recommended for

bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin ﬁlm substrates must be used, the

die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One

way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader

(moly-tab) which is then attached to the ground plane (Figure 2).

Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-

to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils).

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 110

HMC490

v01.1003

MICROWAVE CORPORATION

GaAs PHEMT MMIC LOW NOISE

HIGH IP3 AMPLIFIER, 12 - 17 GHz

Handling Precautions

Follow these precautions to avoid permanent damage.

Cleanliness:

Handle the chips in a clean environment.

DO NOT attempt to clean the chip using liquid cleaning systems.

Static Sensitivity:

Follow ESD precautions to protect against > ± 250V ESD strikes.

Transients:

Suppress instrument and bias supply transients while bias is applied.

Use shielded signal and bias cables to minimize inductive pick-up.

General Handling:

Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers.

The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ﬁngers.

Mounting

The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.

The mounting surface should be clean and ﬂat.

Eutectic Die Attach:

A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265

deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C.

DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds

of scrubbing should be required for attachment.

Epoxy Die Attach:

Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy ﬁllet is observed around the perimeter

of the chip once it is placed into position.

Cure epoxy per the manufacturer’s schedule.

Wire Bonding

Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage

temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is

recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds.

Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as

possible <0.31 mm (12 mils).

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

1 - 111

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HMC490产品参数

型号:	HMC490
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Transferred
IHS 制造商：	HITTITE MICROWAVE CORP
Reach Compliance Code：	compliant
ECCN代码：	EAR99
风险等级：	5.81
其他特性：	LOW NOISE
特性阻抗：	50 Ω
构造：	COMPONENT
增益：	24 dB
最大输入功率 (CW)：	10 dBm
最大工作频率：	17000 MHz
最小工作频率：	12000 MHz
最高工作温度：	85 °C
最低工作温度：	-55 °C
射频/微波设备类型：	WIDE BAND MEDIUM POWER

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