JANTXV2N7219全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

PD - 90555D

IRFM240

JANTX2N7219

JANTXV2N7219

POWER MOSFET

THRU-HOLE (TO-254AA)

REF:MIL-PRF-19500/596

200V, N-CHANNEL

HEXFET^®MOSFETTECHNOLOGY

Product Summary

Part Number

RDS(on)

ID

IRFM240

0.18 Ω

18A

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-254AA

Features:

n

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

n Light-weight

Absolute Maximum Ratings

Parameter

Units

I

@ V

= 10V, T = 25°C

Continuous Drain Current

18

11

D

GS

C

A

I

= 10V, T = 100°C Continuous Drain Current

D

GS

C

I

Pulsed Drain Current ➀

Max. Power Dissipation

72

DM

@ T = 25°C

P

125

1.0

±20

450

18

W

W/°C

V

D

C

Linear Derating Factor

V

Gate-to-Source Voltage

GS

E

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

mJ

A

AS

I

AR

E

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

12.5

5.0

mJ

V/ns

AR

dv/dt

T

-55 to 150

J

T

Storage Temperature Range

^oC

g

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

2.6 (Typical)

Lead Temperature

Weight

For footnotes refer to the last page

www.irf.com

1

1/29/02

IRFM240

Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)

Parameter

Min Typ Max Units

Test Conditions

BV

DSS

Drain-to-Source Breakdown Voltage

200

—

V

= 0V, I = 1.0mA

D

GS

V/°C Reference to 25°C, I = 1.0mA

∆BV

/∆T Temperature Coefficient of Breakdown

0.29

DSS

J

D

Voltage

R

Static Drain-to-Source On-State

Resistance

Gate Threshold Voltage

Forward Transconductance

Zero Gate Voltage Drain Current

—

2.0

6.1

—

0.18

0.25

4.0

—

V

= 10V, I = 11A

D

DS(on)

GS

➀

Ω

= 10V, I = 18A

D

V

= V , I = 250µA

GS(th)

fs

DS

GS

D

Ω

g

S ( )

V

> 15V, I

= 11A ➀

DS

I

25

250

V

= 160V ,V =0V

DSS

DS GS

µA

—

V

= 160V,

DS

= 0V, T = 125°C

V

GS

J

I

Gate-to-Source Leakage Forward

Gate-to-Source Leakage Reverse

Total Gate Charge

—

4.0

100

-100

60

V

= 20V

= -20V

GSS

GS

nA

nC

V

GS

Q

V

=10V, I = 18A

GS D

g

gs

gd

d(on)

r

Gate-to-Source Charge

Gate-to-Drain (‘Miller’) Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

FallTime

10.6

37.6

20

V

= 100V

DS

t

V

= 100V, I = 18A,

DD

GS

D

105

58

V

=10V, R = 9.1Ω

G

ns

d(off)

f

67

L

+ L

Total Inductance

—

Measured from drain lead (6mm/

0.25in. from package) to source

lead (6mm/0.25in. from package)

S

D

nH

C

Input Capacitance

Output Capacitance

—

1300

400

—

V

= 0V, V

= 25V

iss

oss

rss

GS

DS

f = 1.0MHz

pF

Reverse Transfer Capacitance

130

Source-Drain Diode Ratings and Characteristics

Parameter

Min Typ Max Units

Test Conditions

I

V

t

Continuous Source Current (Body Diode)

Pulse Source Current (Body Diode) ➀

Diode Forward Voltage

—

18

72

1.5

500

5.3

S

A

SM

V

T = 25°C, I = 18A, V

= 0V ➀

j

SD

rr

S

GS

Reverse Recovery Time

nS

µC

T = 25°C, I = 18A, di/dt ≤ 100A/µs

j

F

Q

Reverse Recovery Charge

V

DD

≤ 50V ➀

RR

t

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .

S D

on

Thermal Resistance

Parameter

Min Typ Max Units

Test Conditions

R

Junction-to-Case

Case-to-sink

—

1.0

—

thJC

thJS

0.21

°C/W

R

Junction-to-Ambient

—

48

Typical socket mount

thJA

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

2

www.irf.com

IRFM240

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs.Temperature

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3

IRFM240

13a & b

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-SourceVoltage

Drain-to-SourceVoltage

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

ForwardVoltage

4

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IRFM240

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

-

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

V

DS

90%

10%

V

GS

t

r

t

f

Fig 9. Maximum Drain Current Vs.

d(on)

d(off)

CaseTemperature

Fig 10b. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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5

IRFM240

15V

DRIVER

L

V

D S

D.U .T

AS

.

R

G

+

-

V

D D

I

A

20V

1

0.01

Ω

t

p

Fig 12a. Unclamped Inductive Test Circuit

V

(BR)D SS

t

p

Fig 12c. Maximum Avalanche Energy

Vs. DrainCurrent

I

AS

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

0

12V

Q

G

.3µF

10 V

+

V

DS

D.U.T.

-

Q

GD

GS

V

GS

V

G

3mA

I

D

G

Charge

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

6

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IRFM240

Footnotes:

➀➀ I

SD

≤ 18A, di/dt ≤ 150A/µs,

➀➀ Repetitive Rating; Pulse width limited by

V

≤ 200V, T ≤ 150°C

maximum junction temperature.

DD

J

➀➀➀V

= 50V, starting T = 25°C, L= 1.3mH

J

DD

Peak I = 18A, V

➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

= 10V

L

GS

Case Outline and Dimensions —TO-254AA

0.12 [.005]

6.60 [.260]

6.32 [.249]

6.60 [.260]

6.32 [.249]

13.84 [.545]

13.59 [.535]

13.84 [.545]

13.59 [.535]

3.78 [.149]

3.53 [.139]

3.78 [.149]

3.53 [.139]

1.27 [.050]

1.02 [.040]

1.27 [.050]

1.02 [.040]

A

20.32 [.800]

20.07 [.790]

20.32 [.800]

20.07 [.790]

17.40 [.685]

16.89 [.665]

17.40 [.685]

16.89 [.665]

B

13.84 [.545]

13.59 [.535]

22.73 [.895]

21.21 [.835]

13.84 [.545]

13.59 [.535]

B

R 1.52 [.060]

1

2

3

1

2

3

4.06 [.160]

3.56 [.140]

C

17.40 [.685]

16.89 [.665]

0.84 [.033]

MAX.

4.82 [.190]

3.81 [.150]

1.14 [.045]

0.89 [.035]

3X

3.81 [.150]

2X

1.14 [.045]

0.89 [.035]

0.36 [.014]

B A

3X

3.81 [.150]

2X

0.36 [.014]

B A

NOTES:

PIN ASSIGNMENTS

1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994.

2. ALL DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].

3. CONTROLLING DIMENS ION: INCH.

1

2

3

=

DRAIN

SOURCE

GATE

4. CONFORMS TO JEDEC OUTLINE TO-254AA.

CAUTION

BERYLLIA WARNING PER MIL-PRF-19500

Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them

which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that

will produce fumes containing beryllium.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

Data and specifications subject to change without notice. 01/02

www.irf.com

7

This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

型号:	JANTXV2N7219
是否无铅：	含铅
生命周期：	Transferred
IHS 制造商：	INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
零件包装代码：	TO-254AA
包装说明：	FLANGE MOUNT, S-MSFM-P3
针数：	3
Reach Compliance Code：	unknown
ECCN代码：	EAR99
风险等级：	7.3
Is Samacsys：	N
其他特性：	HIGH RELIABILITY
雪崩能效等级（Eas）：	450 mJ
外壳连接：	ISOLATED
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	200 V
最大漏极电流 (ID)：	18 A
最大漏源导通电阻：	0.25 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-254AA
JESD-30 代码：	S-MSFM-P3
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
封装主体材料：	METAL
封装形状：	SQUARE
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大脉冲漏极电流 (IDM)：	72 A
认证状态：	Not Qualified
参考标准：	MIL-19500/596
表面贴装：	NO
端子形式：	PIN/PEG
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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