RFP45N06各脚功能电路原理芯片引脚定义引脚图及功能IC贸易商-中国IC网-芯三七

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产品型号RFP45N06的概述

RFP45N06概述 RFP45N06是一款以N沟道 MOSFET（场效应晶体管）技术为基础的功率器件，广泛应用于电子电路中，特别是在开关电源、直流电机驱动和各种功率放大器等场合。该芯片以其优良的开关特性和低导通电阻而受到工程师们的青睐。RFP45N06的主要特点使其在高频运作和高电流负载情况下表现出色，是众多电源转换和电机控制应用的理想选择。芯片RFP45N06的详细参数在深入了解RFP45N06的特性之前，有必要先列出其关键参数。这些参数对设计者在选择合适的MOSFET器件时至关重要。 - 最大漏极-源极电压 (Vds): 60V——RFP45N06的最大接入电压为60V，允许在多种高电压应用中安全运行。 - 最大漏极电流 (Id): 45A——该参数显示RFP45N06能承受的最大工作电流，并在能够承担高功率负载时保证良好性能。 - 导通电阻 (Rds(on)): 0.025...

产品型号RFP45N06的Datasheet PDF文件预览

RFG45N06, RFP45N06,

RF1S45N06, RF1S45N06SM

S E M I C O N D U C T O R

45A, 60V, Avalanche Rated N-Channel

Enhancement-Mode Power MOSFETs

December 1995

Features

• 45A, 60V

Packages

JEDEC STYLE TO-247

SOURCE

• r_DS(ON)= 0.028Ω

DRAIN

GATE

• Temperature Compensating PSPICE Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

DRAIN

(BOTTOM

SIDE METAL)

• +175^oC Operating Temperature

Description

The RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM

N-Channel power MOSFETs are manufactured using the

MegaFET process. This process, which uses feature sizes

approaching those of LSI integrated circuits gives optimum

utilization of silicon, resulting in outstanding performance.

They were designed for use in applications such as switch-

ing regulators, switching converters, motor drivers, relay

drivers and emitter switches for bipolar transistors. These

transistors can be operated directly from integrated circuits.

PACKAGE AVAILABILITY

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

PART NUMBER

RFG45N06

PACKAGE

TO-247

BRAND

RFG45N06

RFP45N06

F1S45N06

JEDEC TO-262AA

SOURCE

DRAIN

GATE

RFP45N06

TO-220AB

TO-262AA

TO-263AB

DRAIN

(FLANGE)

RF1S45N06

RF1S45N06SM

NOTE: When ordering, use the entire part number. Add the sufﬁx, 9A,

to obtain the TO-263AB variant in tape and reel, i.e.RF1S45N06SM9A.

Formerly developmental type TA49028.

JEDEC TO-263AB

Symbol

DRAIN

(FLANGE)

GATE

SOURCE

Absolute Maximum Ratings T = +25 C

RFG45N06, RFP45N06

RF1S45N06, RF1S45N06SM

UNITS

Drain Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DSS

Drain Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

DGR

Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

Drain Current

±20

RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Refer to Peak Current Curve

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E

Refer to UIS Curve

125

Maximum Avalanche Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

Power Dissipation

= +25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

131

0.877

Derate above +25 C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

W/ C

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

, T

-55 to +175

STG

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures.

File Number 3574.2

3-33

Speciﬁcations RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM

Electrical Speciﬁcations T = +25 C, Unless Otherwise Speciﬁed

PARAMETER

Drain-Source Breakdown Voltage

Gate Threshold Voltage

SYMBOL

TEST CONDITIONS

= 250µA, V = 0V

MIN

TYP

MAX

UNITS

DSS

= V , I = 250µA

GS(TH)

Zero Gate Voltage Drain Current

= 60V,

= 0V

= +25 C

µA

Ω

DSS

GSS

= +150 C

100

0.028

120

Gate-Source Leakage Current

On Resistance

= ±20V

= 45A, V = 10V

DS(ON)

Turn-On Time

= 30V, I = 45A

R = 0.667Ω, V = +10V

Turn-On Delay Time

Rise Time

= 3.6Ω

D(ON)

Turn-Off Delay Time

Fall Time

D(OFF)

Turn-Off Time

150

4.5

OFF

Total Gate Charge

= 0 to 20V

= 0 to 10V

= 0 to 2V

V = 48V,

125

3.7

2050

600

200

G(TOT)

= 45A,

Gate Charge at 10V

Threshold Gate Charge

Input Capacitance

R = 1.07Ω

G(10)

G(TH)

= 25V, V = 0V

ISS

OSS

RSS

f = 1MHz

Output Capacitance

Reverse Transfer Capacitance

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

1.14

C/W

θJC

θJA

C/W

Source-Drain Diode Speciﬁcations

PARAMETER

Forward Voltage

Reverse Recovery Time

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

= 45A

1.5

= 45A, dI /dt = 100A/µs

125

3-34

RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM

Typical Performance Curves

_C= +25^oC

400

100

100µs

0.5

P_DM

0.2

0.1

1ms

0.1

0.05

0.02

0.01

10ms

t₁

OPERATION IN THIS

AREA MAY BE

LIMITED BY r_DS(ON)

t₂

NOTES:

100ms

DUTY FACTOR: D = t₁/t₂

PEAK T_J= P_DMx Z _JC+ T_C

V_DSSMAX = 60V

SINGLE PULSE

10⁰

0.01

_DS, DRAIN-TO-SOURCE VOLTAGE (V)

100

10^-5

10^-4

10^-3

10^-2

10^-1

10¹

t, RECTANGULAR PULSE DURATION (s)

FIGURE 1. SAFE- OPERATING AREA CURVE

FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL

IMPEDANCE

_C= +25^oC

10³

FOR TEMPERATURES ABOVE +25^oC

DERATE PEAK CURRENT

CAPABILITY AS FOLLOWS:

175 – T

V_GS= 20V

V_GS= 10V

I = I

-----------------------

150

10²

TRANSCONDUCTANCE

MAY LIMIT CURRENT

IN THIS REGION

100

125

150

175

10^-3

10^-2

10^-1

10⁰

10¹

10²

10³

10⁴

T_C, CASE TEMPERATURE (^oC)

t, PULSE WIDTH (ms)

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE

FIGURE 4. PEAK CURRENT CAPABILITY

PULSE DURATION = 250µs, T_C= +25^oC

V_DD= 15V

+25^oC

125

100

125

-55^oC

PULSE TEST

PULSE DURATION = 250µs

DUTY CYCLE = 0.5% MAX

V_GS= 10V

V_GS= 8V

100

+175^oC

V_GS= 7V

V_GS= 6V

V_GS= 5V

V_GS= 4.5V

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0

V_GS, GATE-TO-SOURCE VOLTAGE (V)

0.0

1.5

3.0

4.5

6.0

7.5

V_DS,DRAIN-TO-SOURCE VOLTAGE (V)

FIGURE 5. TYPICAL SATURATION CHARACTERISTICS

FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS

3-35

RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM

Typical Performance Curves (Continued)

V_GS= V_DS, I_D= 250µA

PULSE DURATION = 250µs, V_GS= 10V, I_D= 45A

2.0

1.5

1.0

0.5

0.0

2.5

2.0

1.5

1.0

0.5

0.0

-80

-40

120

160

200

-80

-40

120

160

200

T_J,JUNCTION TEMPERATURE (^oC)

FIGURE 7. NORMALIZED r

vs JUNCTION

FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs

TEMPERATURE

DS(ON)

TEMPERATURE

I_D= 250µA

1.2

1.0

0.8

0.6

0.4

0.2

0.0

2.0

1.5

1.0

0.5

0.0

100

125

150

175

-80

-40

120

160

200

T_J,JUNCTION TEMPERATURE (^oC)

T_C, CASE TEMPERATURE (^oC)

FIGURE 9. NORMALIZED DRAIN SOURCE BREAKDOWN

VOLTAGE vs TEMPERATURE

FIGURE 10. NORMALIZED POWER DISSIPATION vs

TEMPERATURE DERATING CURVE

V_GS= 0V, f = 1MHz

4000

V_DD= BV_DSS

7.5

5.0

2.5

3000

C_ISS

2000

0.75 BV_DSS0.75 BV_DSS

0.50 BV_DSS

0.25 BV_DSS

0.50 BV_DSS

0.25 BV_DSS

C_OSS

1000

R_L= 1.33Ω

C_RSS

I_G(REF)= 1.5mA

V_GS= 10V

I_G(REF)

t, TIME (µs)

V_DS, DRAIN-TO-SOURCE VOLTAGE (V)

I_G(ACT)

FIGURE 11. TYPICAL CAPACITANCE vs VOLTAGE

FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR

CONSTANT GATE CURRENT. REFER TO

APPLICATION NOTE AN7254 AND AN7260

3-36

RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM

Typical Performance Curves (Continued)

300

100

STARTING T_J= +25^oC

STARTING T_J= +150^oC

If R = 0

_AV= (L) (I_AS) / (1.3 RATED BV_DSS- V_DD

)

If R ≠ 0

_AV= (L/R) ln [(I_AS*R) / (1.3 RATED BV_DSS- V_DD) + 1]

0.01

0.1

t_AV,TIME IN AVALANCHE (ms)

FIGURE 13. UNCLAMPED INDUCTIVE SWITCHING

Test Circuits and Waveforms

V_DS

BV_DSS

t_P

V_DS

I_AS

V_DD

VARY t_PTO OBTAIN

REQUIRED PEAK I_AS

R_G

DUT

V_DD

V_GS

t_P

I_L

t_AV

0.01Ω

FIGURE 14. UNCLAMPED ENERGY WAVEFORMS

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT

t_ON

t_D(ON)

t_OFF

t_D(OFF)

V_DD

t_R

t_F

R_L

V_DS

90%

V_DS

V_GS

10%

DUT

90%

50%

R_GS

50%

V_GS

10%

PULSE WIDTH

FIGURE 16. RESISTIVE SWITCHING WAVEFORMS

FIGURE 17. RESISTIVE SWITCHING TEST CIRCUIT

3-37

RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM

Temperature Compensated PSPICE Model for the

RFG45N06, RFP45N06, RF1S45N06, RF1S45N06SM

.SUBCKT RFP45N06 2 1 3

REV 1/18/93

*NOM TEMP = +25 C

CA 12 8 3.49E-9

CB 15 14 3.8E-9

CIN 6 8 2E-9

DRAIN

LDRAIN

DPLCAP

RDRAIN

DBREAK

MOS2

DBODY 7 5 DBDMOD

DBREAK 5 11DBKMOD

DPLCAP 10 5 DPLCAPMOD

ESG

VTO

DBODY

EVTO

GATE

MOS1

EBREAK 11 7 17 18 66.5

EDS 14 8 5 8 1

EGS 13 8 6 8 1

LGATE RGATE

EBREAK

RIN

CIN

RSOURCE

LSOURCE

ESG 6 10 6 8 1

EVTO 20 6 18 8 1

SOURCE

S1A

S2A

RBREAK

IT 8 17 1

S1B

S2B

LDRAIN 2 5 1E-9

LGATE 1 9 5.65E-9

LSOURCE 3 7 4.13E-9

RVTO

VBAT

EGS

EDS

MOS1 16 6 8 8 MOSMOD M=0.99

MOS2 16 21 8 8 MOSMOD M=0.01

RBREAK 17 18 RBKMOD 1

RDRAIN 5 16 RDSMOD 3.58E-3

RGATE 9 20 0.681

RIN 6 8 1E9

RSOURCE 8 7 RDSMOD 13.6E-3

RVTO 18 19 RVTOMOD 1

S1A 6 12 13 8 S1AMOD

S1B 13 12 13 8 S1BMOD

S2A 6 15 14 13 S2AMOD

S2B 13 15 14 13 S2BMOD

VBAT 8 19 DC 1

VTO 21 6 0.92

.MODEL DBDMOD D (IS=8.2E-13 RS=7.86E-3 TRS1=2.26E-3 TRS2=2.90E-6 CJO=2.07E-9 TT=5.72E-8)

.MODEL DBKMOD D (RS=1.93E-1 TRS1=5.13E-4 TRS2=-2.15E-5)

.MODEL DPLCAPMOD D (CJO=1.25E-9 IS=1E-30 N=10)

.MODEL MOSMOD NMOS (VTO=3.862 KP=55.57 IS=1E-30 N=10 TOX=1 L=1U W=1U)

.MODEL RBKMOD RES (TC1=1.12E-3 TC2=-5.18E-7)

.MODEL RDSMOD RES (TC1=4.64E-3 TC2=1.58E-5)

.MODEL RVTOMOD RES (TC1=-4.27E-3 TC2=-6.55E-6)

.MODEL S1AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-6.5 VOFF=-1.7)

.MODEL S1BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-1.7 VOFF=-6.5)

.MODEL S2AMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=-3.0 VOFF=2)

.MODEL S2BMOD VSWITCH (RON=1E-5 ROFF=0.1 VON=2.0 VOFF=-3.0)

.ENDS

NOTE: For further discussion of the PSPICE model consult A New PSPICE Sub-circuit for the Power MOSFET Featuring Global

Temperature Options; authors, William J. Hepp and C. Frank Wheatley.

3-38

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RFP45N06产品参数

型号:	RFP45N06
是否Rohs认证：	不符合
生命周期：	Obsolete
IHS 制造商：	INTERSIL CORP
Reach Compliance Code：	not_compliant
ECCN代码：	EAR99
风险等级：	5.18
Is Samacsys：	N
其他特性：	AVALANCHE RATED
外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	60 V
最大漏极电流 (Abs) (ID)：	45 A
最大漏极电流 (ID)：	45 A
最大漏源导通电阻：	0.028 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码：	TO-220AB
JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0
元件数量：	1
端子数量：	3
工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	FLANGE MOUNT
峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	131 W
认证状态：	Not Qualified
子类别：	FET General Purpose Power
表面贴装：	NO
端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE
端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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