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A Product Line of

Diodes Incorporated

ZXMHC3F381N8

30V SO8 Complementary enhancement mode MOSFET H-Bridge

Summary

I_D

Device

V_(BR)DSS

Q_G

R_DS(on)

T_A= 25°C

33mΩ @ V_GS= 10V

60mΩ @ V_GS= 4.5V

55mΩ @ V_GS= -10V

80mΩ @ V_GS= -4.5V

5.0A

N-CH

30V

9.0nC

3.9A

-4.1A

-3.3A

P-CH

-30V

12.7nC

P1S/P2S

Description

This new generation complementary MOSFET H-Bridge

features low on-resistance achievable with low gate drive.

P1G

P2G

Features

P1D/N1D

P2D/N2D

•

2 x N + 2 x P channels in a SOIC package

Low voltage (V_GS= 4.5 V) gate drive

N1G

N2G

Applications

•

DC Motor control

DC-AC Inverters

N1S/N2S

•

Ordering information

Device

Reel size Tape width Quantity

(inches)

(mm)

per reel

ZXMHC3F381N8TC

13

12

2,500

Device marking

ZXMHC

3F381

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ZXMHC3F381N8

Absolute maximum ratings

Parameter

Symbol

N-

P-

Unit

channel channel

V_DSS

V_GS

Drain-Source voltage

Gate-Source voltage

30

-30

V

±20

(b)

(a)

(f)

4.98

3.98

4.17

-4.13

-3.31

-3.36

-3.51

A

I_D

Continuous Drain current @ V_GS= 10V; T_A=25°C

@ V_GS= 10V; T_A=70°C

@ V_GS= 10V; T_A=25°C

@ V_GS= 10V; T_L=25°C

(c)

I_DM

22.9

2.0

-19.6

-2.0

A

Pulsed Drain current @ V_GS= 10V; T_A=25°C

(b)

Continuous Source current (Body diode) at T_A=25°C

I_S

(c)

22.9

-19.6

Pulsed Source current (Body diode) at T_A=25°C

I_SM

P_D

(a)

0.87

6.94

1.35

10.9

W

mW/°C

Power dissipation at T_A=25°C

Linear derating factor

(b)

W

mW/°C

Power dissipation at T_A=25°C

P

D

P

D

Linear derating factor

(f)

0.95

7.63

0.98

7.81

W

mW/°C

Power dissipation at T_L=25°C

Linear derating factor

T , T

j

Operating and storage temperature range

-55 to 150

stg

°C

Thermal resistance

Parameter

Symbol

Value

Unit

°C/W

(a)

R

θJA

144

Junction to ambient

(b)

R

θJA

92

Junction to ambient

(d)

R

θJA

106

254

Junction to ambient

(e)

R

θJA

Junction to ambient

(f)

R

θJL

131

128

Junction to lead

NOTES:

(a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still

air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when

operating in a steady-state condition with one active die.

(b) Same as note (a), except the device is measured at t ≤ 10 sec.

(c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the

maximum junction temperature.

(d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still

air conditions with the heat-sink split into two equal areas (one for each drain connection); the device is measured when

operating in a steady-state condition with one active die.

(e) For a device surface mounted on minimum copper 1.6mm FR4 PCB, in still air conditions; the device is measured when

operating in a steady-state condition with one active die.

(f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state

condition with one active die.

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ZXMHC3F381N8

Thermal characteristics

R_DS(ON)

10

1

10

1

Limited

DC

1s

100ms

10ms

100m

10m

100m

10m

10ms

1ms

Note (a)

100us

10

100us

10

Single Pulse, T_amb=25°C

1

Single Pulse, T_amb=25°C

1

0.1

V_DSDrain-Source Voltage (V)

-V_DSDrain-Source Voltage (V)

N-channel Safe Operating Area

P-channel Safe Operating Area

1.0

140

One Active Die

25 x 25mm 1oz

120

100

Any one

active die

D=0.5

80

0.5

60

Single Pulse

D=0.05

D=0.1

10

D=0.2

40

20

0

0.0

100µ 1m 10m 100m

1

100

1k

0

25

50

75

100

125

150

Pulse Width (s)

Temperature (°C)

Transient Thermal Impedance

Derating Curve

One Active Die

Single Pulse

100

10

1

T

_amb=25°C

100µ 1m 10m 100m

1

10

100

1k

Pulse Width (s)

Pulse Power Dissipation

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ZXMHC3F381N8

N-channel electrical characteristics (at T_amb= 25°C unless otherwise stated)

Parameter

Static

Symbol

Min.

Typ.

Max.

Unit Conditions

Drain-Source breakdown

voltage

30

V

V_(BR)DSS

I_D= 250μA, V_GS= 0V

Zero Gate voltage Drain

current

I_DSS

0.5

µA

nA

V_DS= 30V, V_GS= 0V

I_GSS

Gate-Body leakage

±100

V_GS= ±20V, V_DS= 0V

I_D= 250μA, V_DS= V_GS

V_GS= 10V, I_D= 5A

Gate-Source threshold

voltage

V_GS(th)

1.0

3.0

V

Static Drain-Source

0.033

0.060

R_DS(on)

(a)

Ω

on-state resistance

V_GS= 4.5V, I_D= 4A

Forward

g_fs

(a) (c)

11.8

S

V_DS= 15V, I_D= 5A

Transconductance

Dynamic

(c)

Capacitance

430

101

Input capacitance

Output capacitance

C_iss

pF

V_DS= 15V, V_GS= 0V

C_oss

f= 1MHz

Reverse transfer

capacitance

C_rss

56

pF

(b) (c)

Switching

Turn-on-delay time

Rise time

2.5

3.3

ns

t_d(on)

t_r

t_d(off)

t_f

V_DD= 15V, V_GS= 10V

I_D= 1A

Turn-off delay time

Fall time

11.5

6.3

R_G≅ 6Ω,

(c)

Gate charge

Total Gate charge

Gate-Source charge

Gate-Drain charge

Source–Drain diode

9.0

1.7

2.0

nC

Q_g

V

_DS=15V, V_GS= 10V

Q_gs

Q_gd

I_D= 5A

(a)

I_S= 1.7A, V_GS= 0V

Diode forward voltage

0.82

12

1.2

V

V_SD

t_rr

(c)

ns

nC

Reverse recovery time

I_S= 2.1A, di/dt= 100A/μs

(c)

4.9

Q_rr

Reverse recovery charge

NOTES:

(a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.

(b) Switching characteristics are independent of operating junction temperature.

(c) For design aid only, not subject to production testing

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ZXMHC3F381N8

N-channel typical characteristics

10V

V_GS

T = 150°C

10V

V_GS

4.5V

4V

4.5V

10

1

4V

10

1

3.5V

3V

3.5V

2.5V

2V

3V

0.1

0.01

0.1

0.01

T = 25°C

0.1

2.5V

1

0.1

1

V

Drain-Source Voltage ¹(V⁰)

V

Drain-Source Voltage ¹(V⁰)

DS

Output Characteristics

10

1

V_GS= 10V

I_D= 5A

1.6

1.4

1.2

1.0

0.8

0.6

0.4

V_DS= 10V

R_DS(on)

T = 150°C

0.1

0.01

V_GS(th)

T = 25°C

V_GS= V_DS

I_D= 250uA

2

4

-50

0

50

150

Tj Junction Temperatur¹e⁰⁰(°C)

V_GSGate-Source ³Voltage (V)

Typical Transfer Characteristics

Normalised Curves v Temperature

1000

10

2.5V

V_GS

T = 25°C

100

T = 150°C

1

3V

10

3.5V

0.1

0.01

1E-3

T = 25°C

1

4V

4.5V

10V

0.1

0.01

0.2

0.4

0.6

0.8

1.0

I_DDrain C¹urrent (A)¹⁰

0.1

V_SDSource-Drain Voltage (V)

On-Resistance v Drain Current

Source-Drain Diode Forward Voltage

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ZXMHC3F381N8

N-channel typical characteristics –continued

600

10

9

8

7

6

5

4

3

2

1

0

V_GS= 0V

I_D= 5A

500

400

300

200

100

0

f = 1MHz

C_ISS

C_OSS

C_RSS

V_DS= 15V

1

10

0

1

3

4

6

7

8

9

²Q - Charge⁵(nC)

V_DS- Drain - Source Voltage (V)

Capacitance v Drain-Source Voltage

Gate-Source Voltage v Gate Charge

Test circuits

Current

regulator

Q_G

50k

Same as

D.U.T

12V

Q_GS

Q_GD

V_G

V_DS

I_G

D.U.T

I_D

V_GS

Charge

Basic gate charge waveform

Gate charge test circuit

V_DS

90%

R_D

V_GS

V_DS

R_G

V_DD

10%

V_GS

t_d(on)

t_r

t_d(off)

t_r

t_(on)

Switching time waveforms

Switching time test circuit

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ZXMHC3F381N8

P-channel electrical characteristics (at T_amb= 25°C unless otherwise stated)

Parameter

Static

Symbol

Min.

Typ.

Max.

Unit Conditions

Drain-Source breakdown

voltage

-30

V

V_(BR)DSS

I_D= -250μA, V_GS= 0V

Zero Gate voltage Drain

current

I_DSS

-0.5

µA

nA

V

_DS= -30V, V_GS= 0V

I_GSS

Gate-Body leakage

±100

V_GS= ±20V, V_DS= 0V

Gate-Source threshold

voltage

V_GS(th)

-1.0

-3.0

V

I_D= -250μA, V_DS= V_GS

Static Drain-Source

V_GS= -10V, I_D= -5A

0.055

0.080

R_DS(on)

(a)

Ω

on-state resistance

V_GS= -4.5V, I_D= -4A

Forward

g_fs

(a) (c)

14

S

V_DS= -15V, I_D= -5A

Transconductance

Dynamic

(c)

Capacitance

670

126

Input capacitance

Output capacitance

C_iss

pF

V_DS= -15V, V_GS= 0V

f= 1MHz

C_oss

Reverse transfer

capacitance

C_rss

70

pF

(b) (c)

Switching

Turn-on-delay time

Rise time

1.9

3.0

30

ns

t_d(on)

t_r

t_d(off)

t_f

V_DD= -15V, V_GS= -10V

I_D= -1A

Turn-off delay time

Fall time

R_G≅ 6Ω

21

(c)

Gate charge

Total Gate charge

Gate-Source charge

Gate-Drain charge

Source–Drain diode

12.7

2.0

nC

Q_g

V_DS= -15V, V_GS= -10V

I_D= -5A

Q_gs

Q_gd

2.4

(a)

I_S= -1.7A, V_GS= 0V

Diode forward voltage

-0.82

16.5

11.5

-1.2

V

V_SD

t_rr

(c)

ns

nC

Reverse recovery time

I_S= -2.1A, di/dt= 100A/μs

(c)

Q_rr

Reverse recovery charge

NOTES:

(a) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%.

(b) Switching characteristics are independent of operating junction temperature.

(c) For design aid only, not subject to production testing

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ZXMHC3F381N8

P-channel typical characteristics

10V

4V

4.5V

4V

3V

T = 25°C

3.5V

3V

T = 150°C

10

1

3.5V

10

1

2.5V

2V

2.5V

V_GS

0.1

0.01

V_GS

0.1

1

0.1

1

-V_DSDrain-Source Voltage¹(⁰V)

Output Characteristics

1.6

1.4

1.2

1.0

0.8

0.6

0.4

V_GS= 10V

I_D= 5A

V_DS= 10V

10

1

R_DS(on)

T = 150°C

T = 25°C

V_GS= V_DS

V_GS(th)

I_D= 250uA

0.1

2.0

3.5

-50

0

50

150

Tj Junction Temperatu¹re⁰⁰(°C)

-V G²a^.t⁵e-Source V³o^.l⁰tage (V)

Typical T^Gra^Snsfer Characteristics

Normalised Curves v Temperature

10

2.5V

V_GS

T = 25°C

10

T = 150°C

1

3V

3.5V

1

0.1

T = 25°C

4V

4.5V

10V

0.1

0.01

1E-3

Vgs = 0V

0.8

0.01

0.2

0.4

0.6

1.0

0.1

1

10

-V_SDSource-Drain Voltage (V)

-I_DDrain Current (A)

On-Resistance v Drain Current

Source-Drain Diode Forward Voltage

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ZXMHC3F381N8

P-channel typical characteristics –continued

1000

10

9

8

7

6

5

4

3

2

1

0

I_D= 5A

V_GS= 0V

800

600

400

200

0

f = 1MHz

C_ISS

C_OSS

C_RSS

V_DS= 15V

1

10

0

5

15

Q - Charge (nC¹)⁰

-V_DS- Drain - Source Voltage (V)

Capacitance v Drain-Source Voltage

Gate-Source Voltage v Gate Charge

Test circuits

Current

regulator

Q_G

50k

Same as

D.U.T

0.2␮F

12V

Q_GS

Q_GD

V_G

V_DS

I_G

D.U.T

I_D

V_GS

Charge

Basic gate charge waveform

Gate charge test circuit

V_DS

90%

R_D

V_GS

V_DS

R_G

V_DD

10%

V_GS

Pulse width Ͻ 1␮S

Duty factor 0.1%

t_r

t_d(off)

t_r

t_d(on)

t_(on)

Switching time waveforms

Switching time test circuit

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ZXMHC3F381N8

Packaging details - SO8

DIM

Inches

Min.

Millimeters

DIM

Inches

Min. Max.

0.050 BSC

Millimeters

Max.

0.069

0.010

0.197

0.244

0.157

0.050

Min.

Max.

1.75

0.25

5.00

6.20

4.00

1.27

Min.

A

A1

D

0.053

0.004

0.189

0.228

0.150

0.016

1.35

0.10

4.80

5.80

3.80

0.40

e

b

c

θ

-

1.27 BSC

0.013

0.020

0.33

0.51

0.008

0.010

0.19

0.25

H

0°

-

8°

-

0°

-

8°

E

-

L

-

Note: Controlling dimensions are in inches. Approximate dimensions are provided in millimeters

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ZXMHC3F381N8

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS

DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS

FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or

other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume

any liability arising out of the application or use of this document or any product described herein; neither does Diodes

Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this

document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes

Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all

damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through

unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers

shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and

attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or

unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product

names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems

without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use

provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support

devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related

requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices

or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes

Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages

arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

www.diodes.com

Issue 1.0 - March 2009

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型号:	ZXMHC3F381N8TC
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	DIODES INC
零件包装代码：	SOT
包装说明：	SMALL OUTLINE, R-PDSO-G8
针数：	8
Reach Compliance Code：	compliant
ECCN代码：	EAR99
Factory Lead Time：	17 weeks
风险等级：	1.69
配置：	BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V
最大漏极电流 (Abs) (ID)：	4.9 A
最大漏极电流 (ID)：	3.98 A
最大漏源导通电阻：	0.033 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-G8
JESD-609代码：	e3
湿度敏感等级：	1
元件数量：	4
端子数量：	8
工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	N-CHANNEL AND P-CHANNEL
最大功率耗散 (Abs)：	1.35 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Matte Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	40
晶体管应用：	SWITCHING
晶体管元件材料：	SILICON
Base Number Matches：	1

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