CMF20120D-
Silicon Carbide Power MOSFET
Z-F
ET
™
MOSFET
Features
V
DS
R
DS(on)
= 1200 V
= 80 mΩ
N-Channel Enhancement Mode
Package
I
D(MAX)
@
T
C
=25°C
= 33 A
•
•
•
•
•
•
Industry Leading R
DS(on)
High Speed Switching
Low Capacitances
Easy to Parallel
Simple to Drive
Pb-Free Lead Plating, ROHS Compliant,
Halogen Free
D
D
G
G
TO-247-3
S
S
Benefits
•
•
•
•
Higher System Efficiency
Reduced Cooling Requirements
Avalanche Ruggedness
Increased System Switching Frequency
Part Number
CMF20120D
Package
TO-247-3
Applications
Maximum Ratings
Symbol
•
•
•
Solar Inverters
High Voltage DC/DC Converters
Motor Drives
Parameter
Continuous Drain Current
Value
33
17
78
2.2
1.5
20
-5/+25
150
-55 to
+125
260
1
8.8
Unit
A
Test Conditions
V
GS
@20V, T
C
= 25˚C
V
GS
@20V, T
C
= 100˚C
Note
I
D
I
Dpulse
E
AS
E
AR
I
AR
V
GS
P
tot
T
J
, T
stg
T
L
M
d
Pulsed Drain Current
Single Pulse Avalanche Energy
Repetitive Avalanche Energy
Repetitive Avalanche Current
Gate Source Voltage
Power Dissipation
Operating Junction and Storage Temperature
Solder Temperature
Mounting Torque
A
J
J
A
V
W
˚C
˚C
Pulse width t
P
limited by T
jmax
T
C
= 25˚C
I
D
= 20A, V
DD
= 50 V,
L = 9.5 mH
t
AR
limited by T
jmax
I
D
= 20A, V
DD
= 50 V, L = 3 mH
t
AR
limited by T
jmax
T
C
=25˚C
1.6mm (0.063”) from case for 10s
Nm
M3 or 6-32 screw
lbf-in
2
CMF20120D Rev. -
CREE [ CREE, INC ]
