Electrical Characteristics
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)i
t
r
t
d(off)i
t
fi
E
ON
E
Off
R
G
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Drain-Source On-State Resistance
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Internal Gate Resistance
(25ºC)
(125ºC)
(25ºC)
(125ºC)
Min.
1200
Typ.
2.5
1.8
1
10
80
95
7.3
6.8
1915
120
13
17.2
13.6
62
35.6
530
422
320
329
5
Max. Unit
V
4
100
250
250
110
130
Test Conditions
V
GS
= 0V, I
D
= 100μA
V
DS
= V
GS
, I
D
= 1mA, T
J
= 25ºC
V
DS
= V
GS
, I
D
= 1mA, T
J
= 125ºC
V
DS
= 1200V, V
GS
= 0V, T
J
= 25ºC
V
DS
= 1200V, V
GS
= 0V, T
J
= 125ºC
V
GS
= 20V, V
DS
= 0V
V
GS
= 20V, I
D
= 20A, T
J
= 25ºC
V
GS
= 20V, I
D
= 20A, T
J
= 125ºC
V
DS
= 20V, I
DS
= 20A, T
J
= 25ºC
V
DS
= 20V, I
DS
= 20A, T
J
= 125ºC
V
GS
= 0V
Note
V
μA
nA
mΩ
S
1
fig. 3
pF
V
DS
= 800V
f = 1MHz
V
AC
= 25mV
V
DD
= 800V
fig. 5
ns
V
GS
= -2/20V
I
D
= 20A
R
G
= 6.8Ω
fig. 12
μJ
μJ
Ω
L = 856μH
Per JEDEC24 Page 27
V
GS
= 0V, f = 1MHz, V
AC
= 25mV
NOTES:
1. The recommended on-state V
GS
is +20V and the recommended off-state V
GS
is between -2V and -5V
Reverse Diode Characteristics
Symbol
V
sd
t
rr
Q
rr
I
rrm
Parameter
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
Typ.
3.5
3.1
220
142
2.3
Max.
Unit
V
ns
nC
A
Test Conditions
V
GS
= -5V, I
F
=10A, T
J
= 25ºC
V
GS
= -2V, I
F
=10A, T
J
= 25ºC
V
GS
= -5V, I
F
=20A, T
J
= 25ºC
V
R
= 800V,
di
F
/dt= 100A/μs
Note
fig. 13,14
Thermal Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Parameter
Thermal Resistance from Junction to Case
Case to Sink, w/ Thermal Compound
Thermal Resistance From Junction to Ambient
Typ.
0.58
0.25
Max.
0.7
Unit
Test Conditions
Note
°C/W
40
fig. 6
Gate Charge Characteristics
Symbol
Q
gs
Q
gd
Q
g
Parameter
Gate to Source Charge
Gate to Drain Charge
Gate Charge Total
Typ.
23.8
43.1
90.8
Max.
Unit
nC
Test Conditions
V
DD
= 800V
I
D
=20A
V
GS
= -2/20V Per JEDEC24-2
Note
fig.9
8
CMF20120D Rev. -
CREE [ CREE, INC ]
