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CMF20120D 参数 Datasheet PDF下载

CMF20120D图片预览
型号: CMF20120D
PDF下载: 下载PDF文件 查看货源
内容描述: 碳化硅功率MOSFET [Silicon Carbide Power MOSFET]
分类和应用:
文件页数/大小: 13 页 / 2291 K
品牌: CREE [ CREE, INC ]
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Typical Performance
120
120
100
20
V
GS
=
V
V
100
V
GS
=
20V
V
80
18
V
GS
=
80
18
V
GS
=
6V
V
GS
=1
I
D
(A)
I
D
(A)
60
V
GS
=1
6V
60
V
V
GS
=14
40
V
GS
=14V
V
GS
=12V
40
V
GS
=12V
20
V
GS
=10V
0
0
2
4
6
8
10
12
14
16
18
20
20
V
GS
=10V
0
0
2
4
6
8
10
12
14
16
18
20
V
DS
(V)
V
DS
(V)
Fig 1. Typical Output Characteristics T
J
= 25ºC
60
Fig 2. Typical Output Characteristics T
J
= 125ºC
2
1.8
50
1.6
40
1.4
T = 125
°
C
I
D
(A)
30
Normalized R
DS(on)
1.2
1
0.8
0.6
0.4
0.2
V
GS
=20V
20
T = 25
°
C
10
0
0
2
4
6
8
10
12
14
16
18
20
0
0
25
50
75
100
125
150
V
GS
(V)
T (
o
C)
Figure 3. Typical Transfer Characteristics
1.0E-08
V
GS
= 0 V
f = 1 MHz
Fig 4. Normalized On-Resistance vs. Temperature
1.0E-08
V
GS
= 0 V
f = 1 MHz
C
iss
1.0E-09
C
iss
1.0E-09
Capacitance (F)
C
oss
Capacitance (F)
C
oss
1.0E-10
1.0E-10
C
rss
C
rss
1.0E-11
0
20
40
60
80
100
120
140
160
180
200
1.0E-11
V
DS
(V)
0
100
200
300
400
500
600
700
800
V
DS
(V)
Fig 5A and 5B. Typical Capacitance vs. Drain – Source Voltage
9
CMF20120D Rev. -