Etr onTech
Symbol
C
IN
C
I/O
Parameter
Input Capacitance (CK pin)
DQ, DQS, DM Capacitance
4Mx16 DDR SDRAM
EM658160
Unit
pF
pF
pF
Capacitance (V
DD
= 3.3V, f = 1MHz, Ta = 25
°C)
Min.
2.5
2.5
4
Max.
5
4
6.5
Input Capacitance (except for CK pin)
Note: These parameters are periodically sampled and are not 100% tested.
Recommended D.C. Operating Conditions (V
DD
= 3.3V
±
0.3, Ta = 0~70
°C)
Max.
Parameter
Operation Current
(one bank active)
Operation Current
(one bank active)
Precharge Power-
down Standby Current
Idel Standby Current
Active Power-down
Standby Current
Active Standby
Current
Operation Current
(Read)
Operation Current
(Write)
Auto Refresh Current
Symbol
I
DD0
I
DD1
I
DD2P
I
DD2N
I
DD3P
I
DD3N
I
DD4R
I
DD4W
I
DD5
t
RC
= min, t
CK
= min
Active-precharge
Burst = 2, t
RC
= min, CL = 3
I
OUT
= 0mA, Active-Read-Precharge
CKE
≤
V
IL
(max), t
CK
= min,
All banks idle
CKE
≥
V
IH
(min), CS#
≥
V
IH
(min),
t
CK
= min
All banks ACT, CKE
≤
V
IL
(max),
t
CK
= min
One bank; Active-Precharge,
t
RC
= t
RAS(
max), t
CK
= min
Burst = 2, CL = 3, t
CK
= min,
I
OUT
= 0mA
Burst = 2, CL = 3, t
CK
= min
t
RC(
min)
- 3.3/3.5/4/5/6/7/8
UNIT
250/240/230/220/190/180/160
320/300/260/250/220/210/200
80/80/80/65/65/60/55
170/160/150/130/110/100/90
80/80/80/65/65/60/55
180/170/160/155/145/140/135
330/310/270/250/220/200/180
330/310/270/250/220/200/180
190/180/170/155/145/140/135
mA
Self Refresh Current
I
DD6
CKE
≤
0.2v
2
Etron Confidential
9
Rev. 1.1
Jan. 2002
ETRON [ ETRON TECHNOLOGY, INC. ]
