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HSD8M64D4B 参数 Datasheet PDF下载

HSD8M64D4B图片预览
型号: HSD8M64D4B
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模块64Mbyte ( 8Mx64位) , DIMM , 4Banks , 4K参考, 3.3V [Synchronous DRAM Module 64Mbyte (8Mx64-Bit), DIMM, 4Banks, 4K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 11 页 / 85 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit
PIN FUNCTION DESCRIPTION
Pin
CLK
/CE
Name
System clock
Chip enable
CLK, CKE and DQM
Input Function
HSD8M64D4B
Active on the positive going edge to sample all inputs.
Disables or enables device operation by masking or enabling all inputs except
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior to new command.
CKE
Clock enable
Disable input buffers for power down in standby.
CKE should be enabled 1CLK+tSS prior to valid command.
Row/column addresses are multiplexed on the same pins.
A0 ~ A11
Address
Row address : RA0 ~ RA11, Column address : CA0 ~ CA8
Selects bank to be activated during row address latch time.
BA0 ~ BA1
Bank select address
Selects bank for read/write during column address latch time.
Latches row addresses on the positive going edge of the CLK with RAS low.
/RAS
Row address strobe
Enables row access & precharge.
Column address
/CAS
strobe
/WE
Write enable
Latches data in starting from CAS, WE active.
Data input/output
DQM0 ~ 7
mask
DQ0 ~ 63
Vcc/Vss
supply/ground
Data input/output
Power
Blocks data input when DQM active. (Byte masking)
Data inputs/outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Enables column access.
Enables write operation and row precharge.
Latches column addresses on the positive going edge of the CLK with CAS low.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Voltage on Any Pin Relative to Vss
Voltage on Vcc Supply Relative to Vss
Power Dissipation
Storage Temperature
SYMBOL
V
IN ,OUT
Vcc
P
D
T
STG
RATING
-1V to 4.6V
-1V to 4.6V
4W
-55oC to 150oC
Short Circuit Output Current
I
OS
50mA
Notes:
Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be
restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
URL:www.hbe.co.kr
REV.1.0 (August.2002)
HANBit Electronics Co.,Ltd
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