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HSD8M64D4B 参数 Datasheet PDF下载

HSD8M64D4B图片预览
型号: HSD8M64D4B
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模块64Mbyte ( 8Mx64位) , DIMM , 4Banks , 4K参考, 3.3V [Synchronous DRAM Module 64Mbyte (8Mx64-Bit), DIMM, 4Banks, 4K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 11 页 / 85 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
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HANBit  
HSD8M64D4B  
CKE ³ VIH(min)  
ICC2NS  
CLK £ VIL(max), tCC=¥  
Input signals are stable  
CKE £ VIL(max), tCC=10ns  
CKE&CLK £ VIL(max)  
tCC=¥  
28  
ICC3  
P
20  
20  
Active standby current in  
power-down mode  
mA  
ICC3PS  
CKE³ VIH(min),  
CS*(VIH(min), tCC=10ns  
Input signals are changed  
one time during 20ns  
CKE(VIH(min)  
ICC3  
N
120  
80  
Active standby current in  
non power-down mode  
(One bank active)  
mA  
ICC3NS  
ICC4  
CLK (VIL(max), tCC=(  
Input signals are stable  
IO = 0 mA  
Operating current  
(Burst mode)  
Page burst  
720  
880  
580  
580  
840  
mA  
1
2
4Banks Activated  
tCCD = 2CLKs  
Refresh current  
ICC5  
ICC6  
tRC ³ tRC(min)  
840  
6
mA  
mA  
Self refresh current  
CKE £ 0.2V  
Notes :  
1. Measured with outputs open.  
2. Refresh period is 64ms.  
AC OPERATING TEST CONDITIONS  
(vcc = 3.3V ± 0.3V, TA = 0 to 70°C)  
PARAMETER  
Value  
2.4/0.4  
1.4  
UNIT  
AC Input levels (Vih/Vil)  
V
Input timing measurement reference level  
Input rise and fall time  
V
tr/tf = 1/1  
1.4  
ns  
V
Output timing measurement reference level  
Output load condition  
See Fig. 2  
URL:www.hbe.co.kr  
HANBit Electronics Co.,Ltd  
REV.1.0 (August.2002)  
6