欢迎访问ic37.com |
会员登录 免费注册
发布采购

HSD8M64D4B 参数 Datasheet PDF下载

HSD8M64D4B图片预览
型号: HSD8M64D4B
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模块64Mbyte ( 8Mx64位) , DIMM , 4Banks , 4K参考, 3.3V [Synchronous DRAM Module 64Mbyte (8Mx64-Bit), DIMM, 4Banks, 4K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 11 页 / 85 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
 浏览型号HSD8M64D4B的Datasheet PDF文件第1页浏览型号HSD8M64D4B的Datasheet PDF文件第2页浏览型号HSD8M64D4B的Datasheet PDF文件第3页浏览型号HSD8M64D4B的Datasheet PDF文件第4页浏览型号HSD8M64D4B的Datasheet PDF文件第6页浏览型号HSD8M64D4B的Datasheet PDF文件第7页浏览型号HSD8M64D4B的Datasheet PDF文件第8页浏览型号HSD8M64D4B的Datasheet PDF文件第9页  
HANBit  
HSD8M64D4B  
DC OPERATING CONDITIONS  
(Recommended operating conditions (Voltage referenced to VSS = 0V, TA = 0 to 70°C) )  
PARAMETER  
Supply Voltage  
SYMBOL  
Vcc  
VIH  
MIN  
3.0  
2.0  
-0.3  
2.4  
-
TYP.  
MAX  
3.6  
UNIT  
V
NOTE  
3.3  
Input High Voltage  
Input Low Voltage  
Output High Voltage  
Output Low Voltage  
3.0  
Vcc+0.3  
0.8  
V
1
VIL  
0
-
V
2
VOH  
VOL  
-
V
IOH = -2mA  
IOL = 2mA  
3
-
0.4  
V
Input leakage current  
I IL  
-10  
-
10  
uA  
Notes :  
1. VIH (max) = 5.6V AC. The overshoot voltage duration is £ 3ns.  
2. VIL (min) = -2.0V AC. The undershoot voltage duration is £ 3ns.  
3. Any input 0V £ VIN £ VDDQ  
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.  
CAPACITANCE  
(VCC = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)  
DESCRIPTION  
SYMBOL  
CCLK  
MIN  
2.5  
2.5  
2.5  
5
MAX  
4.0  
UNITS  
Clock  
pF  
pF  
pF  
pF  
/RAS, /CAS,/WE,/CS, CKE, L(U)DQM  
Address  
CIN  
5.0  
CADD  
5.0  
DQ (DQ0 ~ DQ15)  
COUT  
6.5  
DC CHARACTERISTICS  
(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)  
TEST  
VERSION  
10  
PARAMETER  
SYMBOL  
UNIT NOTE  
CONDITION  
Burst length = 1  
13  
10L  
Operating current  
ICC1  
tRC ³ tRC(min)  
600  
560  
560  
mA  
1
(One bank active)  
IO = 0mA  
CKE £ VIL(max)  
tCC=10ns  
ICC2  
P
4
4
mA  
mA  
Precharge standby current in  
power-down mode  
CKE & CLK ( VIL(max)  
tCC=(  
ICC2PS  
ICC2N  
CKE ( VIH(min)  
CS* ³ VIH(min), tCC=10ns  
Input signals are changed  
one time during 20ns  
Precharge standby current in  
non power-down mode  
mA  
80  
URL:www.hbe.co.kr  
HANBit Electronics Co.,Ltd  
REV.1.0 (August.2002)  
5