欢迎访问ic37.com |
会员登录 免费注册
发布采购

HSD8M64D4B 参数 Datasheet PDF下载

HSD8M64D4B图片预览
型号: HSD8M64D4B
PDF下载: 下载PDF文件 查看货源
内容描述: 同步DRAM模块64Mbyte ( 8Mx64位) , DIMM , 4Banks , 4K参考, 3.3V [Synchronous DRAM Module 64Mbyte (8Mx64-Bit), DIMM, 4Banks, 4K Ref., 3.3V]
分类和应用: 动态存储器
文件页数/大小: 11 页 / 85 K
品牌: HANBIT [ HANBIT ELECTRONICS CO.,LTD ]
 浏览型号HSD8M64D4B的Datasheet PDF文件第3页浏览型号HSD8M64D4B的Datasheet PDF文件第4页浏览型号HSD8M64D4B的Datasheet PDF文件第5页浏览型号HSD8M64D4B的Datasheet PDF文件第6页浏览型号HSD8M64D4B的Datasheet PDF文件第7页浏览型号HSD8M64D4B的Datasheet PDF文件第9页浏览型号HSD8M64D4B的Datasheet PDF文件第10页浏览型号HSD8M64D4B的Datasheet PDF文件第11页  
HANBit
AC CHARACTERISTICS
(AC operating conditions unless otherwise noted)
-13
PARAMETER
CLK cycle time
CAS
7.5
latency=3
t
CC
CAS
10
latency=2
CLK to valid
output delay
CAS
5.4
latency=3
t
SAC
CAS
-
latency=2
Output data
hold time
CAS
2.7
latency=3
t
OH
CAS
-
latency=2
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
CAS
5.4
latency=3
t
SHZ
CAS
-
latency=2
6
7
6
6
t
CH
t
CL
t
SS
t
SH
t
SLZ
2.5
2.5
1.5
0.8
1
3
3
2
1
1
3
3
2
1
1
-
3
3
3
6
7
6
6
10
12
1000
1000
1000
10
10
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
-10
-10L
HSD8M64D4B
UNIT
NOTE
ns
1
ns
1,2
ns
2
ns
ns
ns
ns
ns
ns
3
3
3
3
3
2
ns
Notes :
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered, ie., [(tr + tf)/2-1]ns should be added to
the parameter.
URL:www.hbe.co.kr
REV.1.0 (August.2002)
HANBit Electronics Co.,Ltd
8