PRELIMINARY
1Gb: x4, x8, x16
DDR SDRAM
Figure 19: WRITE Burst
T0
CK#
CK
COMMAND
ADDRESS
t
DQSS (NOM)
WRITE
Bank
a,
Col
b
NOP
NOP
NOP
T1
T2
T2n
T3
DQS
DQ
DM
t
DQSS (MIN)
tDQSS
DI
b
DQS
DQ
DM
t
DQSS (MAX)
tDQSS
DI
b
DQS
DQ
DM
tDQSS
DI
b
DON’T CARE
TRANSITIONING DATA
NOTE:
1. DI
b
= data-in for column
b.
2. Three subsequent elements of data-in are applied in the programmed order following DI
b.
3. An uninterrupted burst of 4 is shown.
4. A10 is LOW with the WRITE command (auto precharge is disabled).
09005aef8076894f
1gbDDRx4x8x16_2.fm - Rev. A 3/03 EN
29
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology. Inc.
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