PRELIMINARY
1Gb: x4, x8, x16
DDR SDRAM
Figure 21: Nonconsecutive WRITE to WRITE
T0
CK#
CK
COMMAND
T1
T1n
T2
T2n
T3
T4
T4n
T5
T5n
WRITE
NOP
NOP
WRITE
NOP
NOP
ADDRESS
t
DQSS (NOM)
Bank,
Col
b
t
DQSS
Bank,
Col
n
DQS
DI
b
DI
n
DQ
DM
DON’T CARE
TRANSITIONING DATA
NOTE:
1. DI
b,
etc. = data-in for column
b,
etc.
2.
3.
4.
5.
Three subsequent elements of data-in are applied in the programmed order following DI
b.
Three subsequent elements of data-in are applied in the programmed order following DI
n.
An uninterrupted burst of 4 is shown.
Each WRITE command may be to any bank.
09005aef8076894f
1gbDDRx4x8x16_2.fm - Rev. A 3/03 EN
31
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology. Inc.
MICRON [ MICRON TECHNOLOGY ]
