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NAND01GW3B2CZA6F 参数 Datasheet PDF下载

NAND01GW3B2CZA6F图片预览
型号: NAND01GW3B2CZA6F
PDF下载: 下载PDF文件 查看货源
内容描述: 1千兆位, 2千兆位, 2112字节/ 1056字的页面, 1.8 / 3V , NAND快闪存储器 [1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory]
分类和应用: 闪存存储
文件页数/大小: 60 页 / 1343 K
品牌: NUMONYX [ NUMONYX B.V ]
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Ordering information
NAND01G-B2B, NAND02G-B2C
13
Ordering information
Table 29.
Example:
Device type
NAND flash memory
Density
01G = 1 Gbit
02G = 2 Gbits
Operating voltage
R = V
DD
= 1.7 to 1.95 V
W = V
DD
= 2.7 to 3.6 V
Bus width
3 = x8
4 = x16
(1)
Family identifier
B = 2112-byte/ 1056-word page
Device options
2 = chip enable don't care enabled
Product version
B = second version (1-Gbit devices)
C = third version (2-Gbit devices)
Package
N = TSOP48 12 x 20 mm
ZA = VFBGA63 9.5 x 12 x 1 mm, 0.8 mm pitch
(2)
ZA= VFBGA63 9 x 11 x 1 mm, 0.8 mm pitch
(3)
Temperature range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
E = ECOPACK® package, standard packing
F = ECOPACK® package, tape & reel packing
1. x16 organization only available for MCP products.
2. For NAND02G-B2C devices only.
3. For NAND01G-B2B devices only.
Ordering information scheme
NAND02GR3B2C ZA 6
E
Note:
Devices are shipped from the factory with the memory content bits, in valid blocks, erased to
’1’. For further information on any aspect of this device, please contact your nearest
Numonyx sales office.
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