PE3339
Advance Information
Pin No.
17
18
19
20
Note 1:
Pin Name
CP
NC
GND
f
r
Type
Output
Output
Description
Charge pump current is sourced when f
c
leads f
p
and sinked when f
c
lags f
p
.
No connection.
Ground.
Input
Reference frequency input.
V
DD
pins 1, 9, and 16 are connected by diodes and must be supplied with the same positive voltage level.
Table 2. Absolute Maximum Ratings
Symbol
V
DD
V
I
I
I
I
O
T
stg
Electrostatic Discharge (ESD) Precautions
Max
4.0
V
DD
+ 0.3
+10
+10
150
Parameter/Conditions
Supply voltage
Voltage on any input
DC into any input
DC into any output
Storage temperature
range
Min
-0.3
-0.3
-10
-10
-65
Units
V
V
mA
mA
°
C
When handling this UTSi device, observe the same
precautions that you would use with other ESD-
sensitive devices. Although this device contains
circuitry to protect it from damage due to ESD,
precautions should be taken to avoid exceeding the
rating specified in Table 4.
Latch-Up Avoidance
Unlike conventional CMOS devices, UTSi CMOS
devices are immune to latch-up.
Table 3. Operating Ratings
Symbol
V
DD
T
A
Parameter/Conditions
Supply voltage
Operating ambient
temperature range
Min
2.85
-40
Max
3.15
85
Units
V
°
C
Table 4. ESD Ratings
Symbol
V
ESD
Parameter/Conditions
ESD voltage human body
model (Note 1)
Level
1000
Units
V
Note 1:
Periodically sampled, not 100% tested. Tested per MIL-
STD-883, M3015 C2
PEREGRINE SEMICONDUCTOR CORP.
®
|
http://www.psemi.com
Copyright
©
Peregrine Semiconductor Corp. 2004
Page 3 of 12
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