September 2006
rev 0.2
Pin Configuration
GL
V
DD
V
DD
GND
GND
G(+)
PCS2P5T915A
48
47
46
45
44
43
42
41
40
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
GND
V
DDQ
V
DDQ
GND
GND
GND
V
DDQ
Q2
Q2
GND
V
DDQ
Q3
Q3
V
DDQ
GND
Q4
Q4
V
DDQ
V
DDQ
GND
GND
V
DDQ
GND
TxS
V
DDQ
Q1
Q1
GND
V
DDQ
A/V
REF
A
V
DDQ
GND
Q5
Q5
V
DDQ
G(-)
GND
GND
V
DD
V
DD
RxS
PCS2P5T915A
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
Absolute Maximum Ratings
1
Notes: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. V
DDQ
and V
DD
internally operate independently. No power sequencing requirements need to be met.
3. Not to exceed 3.6V.
Symbol
V
DD
V
DDQ
V
I
V
O
V
REF
T
STG
T
J
Description
Power Supply Voltage
Output Power Supply
Input Voltage
Output Voltage
3
3
2
2
Max
-0.5 to +3.6
-0.5 to +3.6
-0.5 to +3.6
-0.5 to V
DDQ
+0.5
-0.5 to +3.6
-65 to +165
150
Unit
V
V
V
V
V
°C
°C
Reference Voltage
Storage Temperature
Junction Temperature
Capacitance
1,2
(T
A
= +25°C, F = 1.0MHz)
Symbol
Parameter
C
IN
Input Capacitance
Min
Typ
3.5
Max
Unit
pF
Notes:
1. This parameter is measured at characterization but not tested.
2. Capacitance applies to all inputs except RxS and TxS.
Low Voltage (2.5V) High Accuracy 1:5 Clock Fan-Out Buffer
Notice: The information in this document is subject to change without notice.
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PULSECORE [ PulseCore Semiconductor ]
