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P3C125620JC 参数 Datasheet PDF下载

P3C125620JC图片预览
型号: P3C125620JC
PDF下载: 下载PDF文件 查看货源
内容描述: 高速32K ×8 3.3V CMOS静态RAM [HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM]
分类和应用:
文件页数/大小: 10 页 / 266 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P3C1256
RECOMMENDED OPERATING TEMPERATURE & SUPPLY VOLTAGE
Temperature Range (Ambient)
Commercial (0°C to 70°C)
Industrial (-40°C to 85°C)
Supply Voltage
3.0V
V
CC
3.6V
3.0
V
CC
3.6V
MAXIMUM RATINGS
(1)
Stresses greater than those listed can cause permanent damage to the device. These are absolute stress ratings
only. Functional operation of the device is not implied at these or any other conditions in excess of those given in
the operational sections of this data sheet. Exposure to Maximum Ratings for extended periods can adversely
affect device reliability.
Symbol
V
CC
V
TERM
T
A
S
TG
I
OUT
I
LAT
Parameter
Supply Voltage with Respect to GND
Terminal Voltage with Respect to GND (up to 7.0V)
Operating Ambient Temperature
Storage Temperature
Output Current into Low Outputs
Latch-up Current
>200
Min
-0.5
-0.5
-40
-55
Max
7.0
V
CC
+ 0.5
85
125
25
Unit
V
V
°C
°C
mA
mA
DC ELECTRICAL CHARACTERISTICS
(Over Recommended Operating Temperature & Supply Voltage)
(2)
Symbol
V
OH
V
OL
V
IH
V
IL
I
LI
I
LO
I
SB
I
SB1
Parameter
Output High Voltage
(I/O
0
- I/O
7
)
Output Low Voltage
(I/O
0
- I/O
8
)
Input High Voltage
Input Low Voltage
Input Leakage Current
Output Leakage Current
V
CC
Current
TTL Standby Current
V
CC
Current
CMOS Standby Current
GND
V
IN
V
CC
GND
V
OUT
V
CC
CE
= V
CC
V
CC
= 3.6V, I
OUT
= 0 mA
CE
= V
CC
V
CC
= 3.6V, I
OUT
= 0 mA
CE
= V
CC
Test Conditions
I
OH
= –4mA, V
CC
= 3.0V
I
OL
= 8 mA
I
OL
= 10 mA
2.2
-0.5
(3)
-5
-5
Min
2.4
0.4
0.5
V
CC
+ 0.3
0.8
+5
+5
20
Max
Unit
V
V
V
V
V
µA
µA
mA
3
mA
Document #
SRAM122
REV B
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