P3C1256
CAPACITANCES
(4)
(V
CC
= 5.0V, T
A
= 25°C, f = 1.0 MHz)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Test Conditions
V
IN
= 0V
V
OUT
= 0V
Max
10
10
Unit
pF
pF
POWER DISSIPATION CHARACTERISTICS VS. SPEED
Symbol
I
CC
Parameter
Dynamic Operating Current
Temperature
Test
Range
Conditions
Commercial
Industrial
*
*
-12
110
N/A
-15
100
115
-20
95
110
-25
90
105
Unit
mA
mA
*Tested
with outputs open and all address and data inputs changing at the maximum write-cycle rate.
The device is continuously enabled for writing, i.e.,
CE,
and
WE
≤
V
IL
(max),
OE
is high. Switching inputs are 0V
and 3V.
AC ELECTRICAL CHARACTERISTICS - READ CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
t
RC
t
AA
t
AC
t
OH
t
LZ
t
HZ
t
OE
t
OLZ
t
OHZ
t
PU
t
PD
Parameter
Read Cycle Time
Address Access Time
Chip Enable Access
Time
Output Hold from
Address Change
Chip Enable to
Output in Low Z
Chip Disable to
Output in High Z
Output Enable Low
to Data Valid
Output Enable Low to
Low Z
Output Enable High
to High Z
Chip Enable to Power
Up Time
Chip Disable to
Power Down Time
0
12
0
6
0
15
-12
Min
12
12
12
2
2
7
7
0
7
0
20
2
2
8
9
0
9
0
20
Max
Min
15
15
15
2
2
9
11
0
10
-15
Max
Min
20
20
20
2
2
10
12
-20
Max
Min
25
25
25
-25
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Document #
SRAM122
REV B
Page 3 of 10
PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
