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P3C125620JC 参数 Datasheet PDF下载

P3C125620JC图片预览
型号: P3C125620JC
PDF下载: 下载PDF文件 查看货源
内容描述: 高速32K ×8 3.3V CMOS静态RAM [HIGH SPEED 32K x 8 3.3V STATIC CMOS RAM]
分类和应用:
文件页数/大小: 10 页 / 266 K
品牌: PYRAMID [ PYRAMID SEMICONDUCTOR CORPORATION ]
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P3C1256
AC CHARACTERISTICS—WRITE CYCLE
(Over Recommended Operating Temperature & Supply Voltage)
Symbol
t
WC
t
CW
t
AW
t
AS
t
WP
t
AH
t
DW
t
DH
t
WZ
t
OW
Parameter
Write Cycle Time
Chip Enable Time to
End of Write
Address Valid to
End of Write
Address Set-up
Time
Write Pulse Width
Address Hold Time
Data Valid to End of
Write
Data Hold Time
Write Enable to
Output in High Z
Output Active from
End of Write
3
-12
Min
12
10
10
0
9
0
8
0
7
3
Max
Min
15
12
12
0
11
0
10
0
8
3
-15
Max
Min
20
15
15
0
15
0
12
0
10
3
-20
Max
Min
25
18
18
0
18
0
15
0
11
-25
Max
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (WE CONTROLLED)
(10,11)
WE
Notes:
10.
CE
and
WE
must be LOW for WRITE cycle.
11.
OE
is LOW for this WRITE cycle to show t
WZ
and t
OW
.
12. If
CE
goes HIGH simultaneously with WE HIGH, the output remains
in a high impedance state
13. Write Cycle Time is measured from the last valid address to the first
transitioning address.
Document #
SRAM122
REV B
Page 5 of 10